An ultralow concentration of Cr2O3 dopants driven lower temperature sintering ZnO‐based varistor ceramics
Yadong Cheng,Liaoying Zheng,Huarong Zeng,Tian Tian,Xue Shi,Zhenyong Man,Xuezheng Ruan,Guorong Li,Min Zhu
DOI: https://doi.org/10.1002/pssr.202400030
2024-03-09
physica status solidi (RRL) - Rapid Research Letters
Abstract:Low working voltage driven ZnO‐based varistor ceramics play an important role in the multilayer chip varistors, which require a low sintering temperature of ZnO varistor for its low energy consumption. Herein a remarkable reduction of the sintering temperature from the usual 1100°C‐1300°C to 950°C was successfully achieved in the ZnO ceramics via a certain 0.05 mole percent of Cr2O3 dopants. The underlying mechanism was found to be involved with the formation of basal‐plane inversion boundaries between the ZnO grains, which can promote the rapid grain growth within the ceramics. Furthermore, the ZnO varistors with 0.05 mol% Cr2O3 dopant exhibited excellent performance. A low breakdown voltage of 416 V/mm, a high nonlinear coefficient of 39, and a low leakage current of 3.4 μA were obtained simultaneously. This work presents an effective and promising approach for the cost‐efficient preparation of high‐performance ZnO‐based varistors, which has particular significance for the application of multilayer chip varistors with low working voltage. This article is protected by copyright. All rights reserved.
physics, condensed matter, applied,materials science, multidisciplinary