Effect of the Sintering Temperature on the Electrical Properties of Y-Al-doped ZnO Varistors

Lei Wang,Hang Zhang,Kexin Zhang,Yubo Shen,Limin Qu,Yue Yin,Pengfei Meng,Jingke Guo

DOI: https://doi.org/10.1002/ces2.10243

2024-01-01

Abstract:To investigate the relationship between the electrical properties of Y-Al doped ZnO varistors and sintering temperature, in this study, we measured the voltage-current characteristics and electrical performance parameters of samples sintered at 1100 degrees C$1100<^>\circ \text{C}$-1300 degrees C$1300<^>\circ \text{C}$. Scanning electron microscopy observations revealed that as the sintering temperature increased, the grain size grew significantly, leading to a reduction in voltage gradient. Through C--V$C\text{--}V$ characteristic testing, X-ray diffraction and energy dispersive X-ray spectroscopy analysis, it was found that the increase in sintering temperature promoted the formation of interface negative charge and defect reactions by Y3+${\rm Y}<^>{3+}$, increasing Ni$N_{\text{i}}$ and Nd$N_{\text{d}}$; Al3+${\rm Al}<^>{3+}$ tends to aggregate in the grain area, further increasing Nd$N_{\text{d}}$; the volatilization of Bi3+${\rm Bi}<^>{3+}$ gradually increases, causing a decrease in Ni$N_{\text{i}}$; the Phi b$\Phi _{\text{b}}$ first increases and then decreases with the changes in Ni$N_{\text{i}}$ and Nd$N_{\text{d}}$, resulting in a U-shaped variation characteristic of the nonlinear coefficient and leakage current density. At a sintering temperature of 1200 degrees C$1200<^>\circ \text{C}$, the performance of ZnO varistors is optimal.