The voltage stabilization of high voltage gradient ZnO varistors

Lei KE,Dong-mei JIANG,Chun-xia WANG,Xue-ming MA
DOI: https://doi.org/10.3321/j.issn:1001-9731.2008.12.042
2008-01-01
Abstract:High voltage gradient ZnO varistors were fabricated by Y2O3 doping and low-temperature sintering. The effect of Y2O3 concentrations on voltage stabilization was investigated. Experimental results show that the values of voltage gradient and stabilization coefficient respectively reach to 2460.5V/mm and 1.99×10-2 with Y2O3 content of 0.08mol% and sintering temperature of 800°C. Microstructure analysis indicates that it is difficult for Y3+ ions to solid dissolve into ZnO grains at the lower temperature, as well as the volatilization of Bi2O3. Notable decrease of grain size with the given experimental conditions, which causes a remarkable increase in the quantity of grain boundaries, is the origin for the increase in voltage gradient.
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