Abstract:In contrast to the accumulation of upsets at a relatively slow rate in static random access memories (SRAMs) caused by neutrons at the steady-state modes of nuclear reactors, pulsed neutrons generated at a pulsed-state mode with a significantly high flux induce a burst of upsets in a short time (<10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ms). Herein, pulsed-neutron experiments are conducted on SRAMs, showing that the upset cross sections differ as the pulsed-state mode changes, indicating the nonlinearity between the upset bits and the neutron fluence, unlike the linear accumulation of single event upsets (SEUs) with increasing neutron fluence at the steady-state modes. To identify the upset pattern of pulsed-neutron-induced upset bursts, the experimental results are compared to Monte-Carlo simulations, which calculate the growing upset bits of different accumulated upset types and simulate the upset accumulation process at steady-state modes. The experimental results exhibit consistent and precise accordance with the simulation results, indicating that the pulsed-neutron induced upset bursts are caused by the same accumulating process as that of SEUs at the steady-state modes. The observed nonlinearity is attributed to the uncertainty of neutron-fluence measurements, uncounted secondary upsets, and some unidentified systematic errors in cross-section calculations. The identification of pulsed-neutron-induced upset bursts with the accumulation of SEUs can convincingly distinguish such upset bursts from dose rate upset (DRU) bursts.

Study on the Dose Rate Upset Effect of Partially Depleted Silicon-on-insulator Static Random Access Memory

Experimental investigations on pulsed neutron radiation effect on commercial CMOS SRAMs

Study on the Transient Ionization Radiation Damage Pattern of 0.18μm SRAM

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Comparative Analysis of Upset-Multiplicity Occurrences Due to Flash X-rays and Pulsed Neutrons in Commercial SRAMs

Experimental Study on Heavy Ion Single Event Effects in SOI SRAMs

Design of a High-Performance 12T SRAM Cell for Single Event Upset Tolerance

Simulation of Transient Radiation Upset in a 0.18-Μm CMOS SRAM by Accurately Modeling a 6T Memory Cell

Effects of Total Ionizing Dose on Transient Ionizing Radiation Upset Sensitivity of 40–180 Nm SRAMs

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Testing of a new type SEU-tolerant SRAM

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

The Total Ionizing Dose Response of a DSOI 4kb SRAM

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

Identification of Pulsed-Neutron-Induced Upset Bursts in Static Random Access Memories using Monte-Carlo Simulations

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

A Novel Single Event Upset Hardened Cmos Sram Cell

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Low-energy Neutron-Induced Single-Event Upsets in Static Random Access Memory

Single-Event Upset Prediction in SRAMs Account for On-Transistor Sensitive Volume

Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP