Abstract:Static random-access memory (SRAM) circuits exposed to pulsed X- or γ-rays will suffer transient radiation upsets, which poses a significant challenge to their reliability. The transient radiation upsets are caused by global photocurrents, which are governed by the interconnect resistance of the power supply lines and the local photocurrents generated in each memory cell. Thus, accurate modeling of local photocurrents in each memory cell is essential for predicting the global photocurrents and transient radiation upset thresholds of SRAM circuits. In this study, the local photocurrents generated in a 0.18-μm complementary metal-oxide-semiconductor (CMOS) SRAM cell are extracted using a physics-based model of the actual device structure, rather than an analytical or experimental model. The memory cell containing six transistors and parasitic structures is accurately modeled in three-dimensions. Its responses to pulsed γ-rays are simulated with an in-house parallel semiconductor device simulation program, which enables the extraction of accurate local photocurrents. These local photocurrents, together with the interconnect resistance of the power supply lines in SRAM circuits, are modeled and simulated with an in-house parallel SPICE circuit solver. Using this approach, the global photocurrents in the 0.18-μm CMOS SRAM circuit irradiated with γ-rays are obtained and the known rail-span-collapse effect is observed. Finally, the transient radiation upset threshold of the SRAM circuit is predicted numerically and verified experimentally.

Study on the Transient Ionization Radiation Damage Pattern of 0.18μm SRAM

Simulation of Transient Radiation Upset in a 0.18-Μm CMOS SRAM by Accurately Modeling a 6T Memory Cell

Study on the Dose Rate Upset Effect of Partially Depleted Silicon-on-insulator Static Random Access Memory

Effects of Total Ionizing Dose on Transient Ionizing Radiation Upset Sensitivity of 40–180 Nm SRAMs

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Experimental investigations on pulsed neutron radiation effect on commercial CMOS SRAMs

Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501

Testing of a new type SEU-tolerant SRAM

Soft errors in commercial off-the-shelf static random access memories

Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Investigation of Transient Dose-Rate Effect on High-Speed Comparator SB9696

Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Low-energy Neutron-Induced Single-Event Upsets in Static Random Access Memory

SEU Effects Induced by Reactor Spallation and Accelerator Neutron Sources in Nano-SRAMs

Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP

SEU in SRAMs Due to 2.5 MeV, 14 MeV and Reactor Neutrons

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits