Abstract:A large amount of data needs to be stored in integrated circuits when data are being processed. The integrated circuits contain a large amount of static random access memory (SRAM) due to its high level of integration and speed. SRAM units should be as small as possible to achieve higher storage density. In this work, the features of single cell upsets (SCUs) and multiple cell upsets (MCUs) in a full custom SRAM are tested for a 40 nm bulk CMOS technology node, and Ge (linear energy transfer (LET) = 37.3 MeV cm2/mg), Cl (LET = 13.1 MeV cm2/mg), Al (LET = 8.6 MeV cm2/mg), O (LET = 3.1 MeV cm2/mg), and Li (LET = 0.5 MeV cm2/mg) particles are used. The test results show that the total single cell upset events are 2,000,147, 1,124,269, 413,100, 311,311, and 47,815 under the irradiation of Ge, Cl, Al, O, and Li, respectively. Moreover, due to single event upset reversal mechanism, multiple cell upsets significantly decrease. The total multiple cell upset events are 10, 4, 0, 0, and 0 under the irradiation of Ge, Cl, Al, O, and Li, respectively. There are a lot of single cell upsets appearing under Ge, Cl, Al, O, and Li exposure. The number is increasing with increasing LET, which means that well contacts still need optimization in the full custom SRAM. Close spacing of well contacts or increasing contacts are the approaches used to drain the excess carriers quickly, and error detection and correction (EDAC) is used for SRAM technology. The features show that SCUs have become a major source of soft errors for the full custom SRAM. Combining close spacing of well contacts with error detection and correction (EDAC) and a well engineering scheme are used to reduce single cell upsets, although there are a few MCUs which are inevitable. Radiation hardened by design schemes needs to be further improved.

Design of a High-Performance 12T SRAM Cell for Single Event Upset Tolerance

Characterization of Single Event Cell Upsets in a Radiation Hardened SRAM in a 40 Nm Bulk CMOS Technology

A Novel Single Event Upset Hardened Cmos Sram Cell

Single-Event Upset Prediction in SRAMs Account for On-Transistor Sensitive Volume

A Novel Seu Hardened Sram Bit-Cell Design

Proposing a Solution for Single-Event Upset in 1T1R RRAM Memory Arrays

A Highly Reliable and Low-Power Cross-Coupled 18T SRAM Cell

Experimental Research of Multiple Cell Upsets in 65 nm Triple-well CMOS Static Random Access Memory

Verification of SEU Resistance in 65 Nm High-Performance SRAM with Dual DICE Interleaving and EDAC Mitigation Strategies

Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-Nm Bulk FinFET SRAMs

Testing of a new type SEU-tolerant SRAM

Single Event Upset Sensitivity of 45 Nm FDSOI and SOI FinFET SRAM

Low Power and High Write Speed SEU Tolerant SRAM Data Cell Design

Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications

Study on Single Event Upsets in a 28 Nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation

SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview

A Novel SEU Tolerant SRAM Data Cell Design.

Design of Highly Reliable 14T and 16T SRAM Cells Combined with Layout Harden Technique

Design of polarity hardening SRAM for mitigating single event multiple node upsets

A Novel Circuit and Layout Design of SEU Tolerant SRAM in a 65nm CMOS Process

1T2R: A Novel Memory Cell Design to Resolve Single-Event Upset in RRAM Arrays