Abstract:A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology. The single event upset(SEU) cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET) value ranging from 1.7 to 83.4 MeV/(mg/cm 2 ). Experimental results show that the upset threshold(LET th ) of a 4 KB block is approximately 6 MeV/(mg/cm 2 ), which is much better than that of a standard unhardened SRAM with an identical technology node. A1 KB block has a higher LETthof 25 MeV/(mg/cm 2 ) owing to the use of the error detection and correction(EDAC)code. For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm 2 )), the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably. Compared with normal incident ions, the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test. Moreover,the SEU cross section indicates a significant dependence on the data pattern. When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell, it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout. Finally, some suggestions are provided to further improve the radiation resistance of the memory. By implementing a particular design at the layout level, the SEU tolerance of the memory is improved significantly at a low area cost. Therefore, the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.

A Novel SEU Tolerant SRAM Data Cell Design.

Low Power and High Write Speed SEU Tolerant SRAM Data Cell Design

A Novel Seu Hardened Sram Bit-Cell Design

SEU-hardened SRAM Cell

A Novel Highly Reliable and Low-Power Radiation Hardened SRAM Bit-Cell Design

An SEU Hardened 65Nm/4t-Sram Cell for High Reliable Space Applications

SEU Tolerance Improvement in 22 Nm UTBB FDSOI SRAM Based on a Simple 8T Hardened Cell

Testing of a new type SEU-tolerant SRAM

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

A Novel Circuit and Layout Design of SEU Tolerant SRAM in a 65nm CMOS Process

Verification of SEU Resistance in 65 Nm High-Performance SRAM with Dual DICE Interleaving and EDAC Mitigation Strategies

A Novel SEU Tolerant Memory Cell for Space Applications.

A Novel Soft Error Immunity SRAM Cell

Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability

A Highly Reliable Radiation Hardened 8T SRAM Cell Design

Area-efficient Radiation-Hardened 6 T SOI SRAM Cell Design Using TDBC Transistors

Research and Design of SEU-Hardened SRAM Chip

Design of polarity hardening SRAM for mitigating single event multiple node upsets

Design of a High-Performance 12T SRAM Cell for Single Event Upset Tolerance

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs