Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Study of One-Dimensional Spatial Distribution of the Plasma Luminous Radicals During Depositing Silicon Films

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

THE OES IN DEPOSITING MICROCRYSTALLINE SILICON MATERIAL BY RF-PECVD

Effect of Silane Concentration on Intrinsic Microcrystalline Silicon

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Parametric Study and Residual Gas Analysis of Large-Area Silicon-Nitride Thin-Film Deposition by Plasma-Enhanced Chemical Vapor Deposition

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Preparation of thin Si:H films in an inductively coupled plasma reactor and analysis of their surface roughness

Research On Silane Depletion Status During The Deposition Of Silicon Thin Films By High-Pressure Pecvd

The Microstructure and Optical Properties of Crystallized Hydrogenated Silicon Films Prepared by Very High Frequency Glow Discharge

Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma

Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H2-SiH4 plasma

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Investigation of the microstructure and optical properties of hydrogenated polymorphous silicon films prepared with pure silane

Effect of Silane/hydrogen Ratio on Microcrystalline Silicon Thin Films by Remote Inductively Coupled Plasma