Abstract:Quaternary (AlxGa1-x)yIn1-yP alloys grown on GaAs substrates have recently gained considerable interest in photonics for improving visible light-emitting diodes, laser diodes, and photodetectors. With two degrees of freedom (x, y) and keeping growth on a lattice-matched GaAs substrate, the (AlxGa1-x)0.5In0.5P alloys are used for tuning structural, phonon, and optical characteristics in different energy regions from far-infrared (FIR) → near-infrared (NIR) → ultraviolet (UV). Despite the successful growth of (AlxGa1-x)0.5In0.5P/n+-GaAs epilayers, limited optical, phonon, and structural characteristics exist. Here, we report our results of carefully examined optical and vibrational properties on highly disordered alloys using temperature-dependent photoluminescence (TD-PL), Raman scattering spectroscopy (RSS), and Fourier-transform infrared reflectivity (FTIR). Macroscopic models were meticulously employed to analyze the TD-PL, RSS, and FTIR data of the (Al0.24Ga0.76)0.5In0.5P/n+-GaAs epilayers to comprehend the energy-dependent characteristics. The Raman scattering and FTIR results of phonons helped analyze the reflectivity spectra in the FIR region. Optical constants were carefully integrated in the transfer matrix method for evaluating the reflectivity R(E) and transmission T(E) spectra in the NIR → UV regions, validating the TD-PL measurements of bandgap energies (EgPL).

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Low energy oscillatory phenomena in photoreflectance of GaMnAs films grown by LT-MBE

Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films

Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

Temperature-dependent Optical Properties of Pb1−xMnxSe Films Epitaxially Grown on Zn0.04Cd0.96Te Substrates

Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy

Optical property studies of GaN films grown by MOCVD

Optical transitions in new semiconductor alloy GaAs/sub 1-x/Bi/sub x/ with temperature-insensitive band gap

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

Photoreflectance Study of Gan Film Grown by Metalorganic Chemical Vapor Deposition

Comparative Analysis of Raman Spectra of GaN and GaN:Mg Epitaxial Layer at Low Temperature

A Genetic Algorithm Research on Lorentz Oscillator Model in Infrared Spectra of Gamnn

Impurity Scattering Induced Excitonic Polariton Damping And Its Influence On The Reflectance Spectra Of Gan Epilayers

Compositional Modulation and Optical Emission in AlGaN Epitaxial Films

Temperature Dependence Of The Optical Properties In Gamnn

Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate

Optical Transitions In Ganas/Gaas Single Quantum Well

Conductance Oscillations Induced by Longitudinal Resonant States in Heteroepitaxially Defined Ga0.25In0.75As/InP Electron Waveguides