Abstract:Raman scattering spectra of GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire substrate are investigated. Some weak peaks are also observed in two spectra besides the allowed E 2 and A 1(LO) phonon modes in Z(X-)Z backscattering geometry. The origins of these peaks are discussed and the differences between two spectra are compared. Two peaks at 640 and 660 cm -1 are observed both in the spectra of GaN and Mg-doped GaN samples. The 640 cm -1 peak is attributed to an overtone process of the highest acoustic-phonon branch at the zone boundary (L point). The peak at 660 cm -1 is attributed to the optical-phonon branch at the zone boundary or the local vibrational mode induced by defect. In the spectrum of Mg-doped GaN sample there is a broad feature near the two peaks. It is suggested that the broad feature arises from the local vibrational mode of Mg-N bond which superposed on the two peaks mentioned above or arises from defect-induced broaden. Two additional peaks at 276 cm -1 and 376 cm -1 are also observed in the spectrum of Mg-doped GaN sample. The peak at 276 cm -1 is the local vibrational mode of Mg-N bond and the peak at 376 cm -1 is the local vibrational mode of impurity- defect complex. The frequency of E 2 mode in Mg-doped GaN shifted to low energy side compared with GaN sample, and located at 568 cm -1 at room temperature. This indicated that the relaxation of residual stress existed in Mg-doped sample. The stress relaxation is contributed to Mg-induced generation of dislocation. Furthermore, electron-phonon interaction also can induce frequency shift of E 2 mode.

Comparative Analysis of Raman Spectra of GaN and GaN:Mg Epitaxial Layer at Low Temperature

Comparative Analysis of Temperature-dependent Raman Spectra of GaN and GaN/Mg Films

Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD

Temperature-Dependent Raman Scattering of Phonon Modes and Defect Modes in GaN and p-Type GaN Films

Raman scattering spectra of GaN grown by MOCVD

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Photoluminescence of Mg-Doped GaN Epilayers at Different Concentrations

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Comparison of As-Grown and Annealed GaN/InGaN : Mg Samples

Temperature Dependence of Raman Scattering in GaMnN

Optical properties of Mn4+ ions in GaN:Mn codoped with Mg acceptors

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Optical property studies of GaN films grown by MOCVD

Optical and Electrical Properties of GaN: Mg Grown by MOCVD

Photoluminescence of Mg-Doped Gan with Different Mg Concentrations after Annealing at Different Temperatures

Temperature-dependent Ultraviolet Raman Scattering and Anomalous Raman Phenomenon of AlGaN/GaN Heterostructure.

Raman and Infrared Spectra Study of GaN1-xPx Ternary Alloys Grown by MOCVD

Low Energy Oscillatory Phenomena in Photoreflectance and Photo-Modulation Reflectance Spectra of Gamnas Films Grown by Low Temperature Molecular-Beam Epitaxy

Studies on Structural and Magnetic Properties in Mn-Doped GaN

RAMAN SPECTROSCOPY STUDY ON LO PHONON-PLASMON COUPLED MODE IN GaN THIN FILMS

Effect of Temperature on Longitudinal Optical Phonon-Assisted Exciton Luminescence in Heteroepitaxial GaN Layer