Abstract:The transverse magnetoconductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ of a two-dimensional electron gas (2D EG) in selectively doped ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{In}}_{\mathrm{x}}$As/GaAs pseudomorphic structures is shown to behave very differently from that of the ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/GaAs structures in the quantum Hall regime. Well-defined peaks of transverse conductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ corresponding to each Landau level were observed and their peak heights increased with the increase of InAs composition. Also, the peak height of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ increases with the Landau number N in the pseudomorphic structure, especially for samples with x\ensuremath{\ge}0.13 ${\ensuremath{\sigma}}_{\mathrm{xx}}$ varies in proportional to N+(1/2, whereas it remains almost unchanged when N increased in the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs structures. The behavior of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ for the pseudomorphic structure is very similar to that of the 2D EG formed in the inversion layer of the Si metal-oxide-semiconductor field-effect transistor. The observed difference between the pseudomorphic structure and the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs heterostructure is interpreted in terms of the change in the dominant scattering mechanism, i.e., the short-range cluster scattering in the former, and the long-range scattering in the latter.

Conductance Oscillations Induced by Longitudinal Resonant States in Heteroepitaxially Defined Ga0.25In0.75As/InP Electron Waveguides

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Oscillatory Magneto-Conductance In Quantum Waveguides With Lateral Multi-Barrier Structures

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Transparency of Band-Gap-shifted InGaAsP/lnP Quantum-Well Waveguides

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Submillimeter Wave Induced Resistance Oscillations in Ultra-High Mobility Two-Dimensional Electron Systems

Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

Electronic States and Magnetotransport in Quantum Waveguides with Nonuniform Magnetic Fields

Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure

Multiple-Frequency Current Oscillations in Gaas-Algaas Quantum Wells Containing A Thin Semi-Insulating Layer

Magnetoconductivity of a two-dimensional electron gas in Al0.3Ga0.7As/Ga1−xInxAs/GaAs pseudomorphic heterostructures in the quantum hall regime

Nonlinear Transport in Gaas/Alas Harmonically Confined Quantum Wires

Design of Graphene Waveguides: Effect of Edge Orientation and Waveguide Configuration

CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES

Conduction-band Offset in a Pseudomorphic GaAs/In0.2Ga0.8As Quantum Well Determined by Capacitance–voltage Profiling and Deep-Level Transient Spectroscopy Techniques

Robust Helical Edge Transport in GatedInAs/GaSbBilayers

Band Offsets, Dielectric Dispersion, Optical Conduction and Impedance Spectroscopy Analyses of WO3/Ga2S3 Heterojunctions

Quantum Interference Effect in Gaas/Algaas Double Quantum Wells