Abstract:Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 mu m thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch-deposition cycling and trench profile controlling. A 4 x 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm(2))(-1) for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room-temperature processing essence, the present parylene-filled-trench technique is believed to be a promising isolation method in the post-complementary metal oxide semiconductor MEMS integration.

Deep trench refilling with parylene C for high-quality isolation in bulk micromachined devices

A Parylene-Filled-Trench Technique for Thermal Isolation in Silicon-Based Microdevices

Fabrication of ultra-deep high-aspect-ratio isolation trench without void and its application

Investigation Of Fabricating Ultra Deep And High Aspect Ratio Electrical Isolation Trench Without Void

Fabrication of keyhole-free ultra-deep high-aspect-ratio isolation trench and its applications

Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill

A Novel Isolation Technology in Bulk Micromachining Using Deep Reactive Ion Etching and A Polysilicon Refill

Molecular Effusion-Boltzmann Model for Parylene C Deposition in Deep Trench.

A polymer trench filling based silicon isolation technique and its application to two-axis scanning comb-drive micromirrors

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Advanced plasma processing combined with trench isolation technology for fabrication and fast prototyping of high aspect ratio MEMS in standard silicon wafers

The Study of Shallow Trench Isolation Gap-Fill for 28nm Node and Beyond

Deep groove etching for partial reflectors in InP-based monolithically integrated photonic devices

Parylene-MEMS Technique-Based Flexible Electronics

Fabrication and Analysis of a Fabry-Perot Cavity with a Micromechanical Wet-Etching Process.

Fabrication And Characterization Of Parylene C-Caulked Pdms For Low-Permeable Microfluidics

Optimized chemical mechanical polishing of Parylene C for high-density wiring in flexible electronics

SF6 Optimized O2 Plasma Etching of Parylene C