Abstract:Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 mu m thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch-deposition cycling and trench profile controlling. A 4 x 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm(2))(-1) for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room-temperature processing essence, the present parylene-filled-trench technique is believed to be a promising isolation method in the post-complementary metal oxide semiconductor MEMS integration.

Advanced Conformal Parylene Fabrication for Micro/nano Devices

Simple and Cost-Effective Fabrication of Two-Dimensional Plastic Nanochannels from Silica Nanowire Templates

Fabrication And Characterization Of Parylene C-Caulked Pdms For Low-Permeable Microfluidics

Fabrication and Characterization of the Functional Parylene-C Film with Micro/nano Hierarchical Structures

Highly Controllable and Reliable Ultra-Thin Parylene Deposition

Reliable Deposition Of Ultra-Thin Parylene

Optimized chemical mechanical polishing of Parylene C for high-density wiring in flexible electronics

Ultra-thin Parylene-C Deposition on PDMS

Microfabrication And Characterization Of Parylene Af(4)

Microfabrication and Characterization of Parylene AF<inf>4</inf>

Studies on Parylene C-caulked PDMS (pcpdms) for Low Permeability Required Microfluidics Applications.

SF6 Optimized O2 Plasma Etching of Parylene C

SF₆ Optimized O₂ Plasma Etching of Parylene C.

Patterned Microstructure Array Fabrication By Using A Novel Standing Surface Acoustic Wave Device

Bottom-up fabrication of special parylene films based on selective growth on Au-coated surface

Deep trench refilling with parylene C for high-quality isolation in bulk micromachined devices

Hot Embossing to Fabricate Parylene-Based Microstructures and Its Impact on the Material Properties

Microfabrication of Micropore Array for Cell Separation and Cell Assay.

A Parylene-Filled-Trench Technique for Thermal Isolation in Silicon-Based Microdevices

Copolymerization of Parylene C and Parylene F to Enhance Adhesion and Thermal Stability Without Coating Performance Degradation.

A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications