Abstract:Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 mu m thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch-deposition cycling and trench profile controlling. A 4 x 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm(2))(-1) for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room-temperature processing essence, the present parylene-filled-trench technique is believed to be a promising isolation method in the post-complementary metal oxide semiconductor MEMS integration.

Molecular Effusion-Boltzmann Model for Parylene C Deposition in Deep Trench.

Deep trench refilling with parylene C for high-quality isolation in bulk micromachined devices

Fabrication of ultra-deep high-aspect-ratio isolation trench without void and its application

Modeling on Molten Pool Transport in Laser Deposition Processes by Lattice Boltzmann Method

Investigation Of Fabricating Ultra Deep And High Aspect Ratio Electrical Isolation Trench Without Void

A Parylene-Filled-Trench Technique for Thermal Isolation in Silicon-Based Microdevices

Calculation of the current density distribution of submicron copper electroplating based on uneven adsorption of poly(ethylene glycol)

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Fabrication of keyhole-free ultra-deep high-aspect-ratio isolation trench and its applications

A multi-phase-field model of topological pattern formation during electrochemical dealloying of binary alloys

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Self-organized Composite Morphologies and Interface Instability of Immiscible Alloy Thin Films During Physical Vapor Deposition: Insights from Phase-Field Simulations

Feature Scale Simulation of PECVD of SiO2 in SiH4/N2O Mixture

Advanced Conformal Parylene Fabrication for Micro/nano Devices

Analytical Model for an Extended Field Plate Effect on Trench Ldmos with High-K Permittivity

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Simulation of Magnetic-Field-Induced Ion Motion in Vacuum Arc Deposition for Inner Surfaces of Tubular Workpiece

CFD-DEM Coupling Model for Deposition Process Analysis of Ultrafine Particles in a Micro Impinging Flow Field

Mesoscopic modeling of mechanical erosion for the ablation-erosion behavior of 3D C/C composites

Hierarchical effects of multi-layer powder spreading in the electron beam powder bed fusion additive manufacturing of pure tungsten material

Simulation studies on PECVD SiO2 process aiming at TSV application