Abstract:In high-resolution transmission electron microscopy (HRTEM) images of heterostructures, it is always difficult to accurately determine the interface position and identify dislocations in a large field of view at tens to hundreds of nanometers due to the small lattice differences. However, in the heterostructure, the determination of the interface position is the key to obtain the true mismatch stress/strain field of the interface. Due to the magnifying effect of the digital moiré method on small differences, digital moiré technology was applied to determine Ge/Si heterostructure interfaces and large-area identification interface dislocations in HRTEM lattice diagrams in this study. By optimizing the frequency and angle of the reference lattice, the interface and dislocation position are clearly and intuitively displayed. How to accurately determine the position of the heterostructure interface and the dislocation of the large-area recognition interface from HRTEM images are studied through simulation experiments. The results show that when the frequency of the reference lattice and the specimen lattice are close, and the angle between them is within 10°, the position of the heterostructure interface can be accurately and intuitively determined by the naked eye according to the distortion characteristics of the moiré fringe. When the frequency of the reference lattice is 0.7 to 0.9 times of the specimen lattice, and the rotation angle is within 8°, the visually clear crossover phenomenon of the moiré fringes is used for large-area identification of interface dislocations. Using the phase measurement interface position sensitivity can reach the Å level. Using the phase-shifting digital moiré method the strain field on the dislocation core at the Ge/Si heterostructure interface and the interface stress distribution were quantitatively analyzed. Compared with the Peierls-Nabarro dislocation model and the Foreman dislocation model, Foreman's variable factor α = 4 is more suitable for describing the strain field of misfit dislocations on the Ge/Si heterostructure interface.

Nanoscale strain analysis of Si/Ge heterostructures

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Full-field strain mapping at a Ge/Si heterostructure interface

Strain and Stability of Ultrathin Ge Layers in Si/Ge/Si Axial Heterojunction Nanowires.

Structure , strain and stability of ultra-thin Ge layers in Si / Ge / Si axial heterojunction nanowires

Strain Field Mapping of Dislocations in a Ge/Si Heterostructure.

Quantitative Analysis of Si/Ge Quantum Structures by High-Resolution Transmission Electron Microscopy

Strained hetero interfaces in Si/SiGe/SiGe/SiGe multi-layers studied by scanning moiré fringe imaging

Study of strain distribution in GeSi/Si strained heterostructure

Molecular Dynamics Simulations of Packing Structures and Local Stress in the Ge(100)/Si(110) Interface at Atomic Scale

Atomic‐scale Strain Analysis for Advanced Si/SiGe Heterostructure by Using Transmission Electron Microscopy

Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moire method

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Automatic Detection of Defect Positions Including Interface Dislocations and Strain Measurement in Ge/Si Heterostructure from Moiré Phase Processing of TEM Image

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Application of Digital Phase Shifting Moiré Method in Interface and Dislocation Location Recognition and Real Strain Characterization from HRTEM Images.

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

EFFECTS OF STRAIN ON INTERFACIAL THERMAL BOUNDARY RESISTANCE AT Si/Ge INTERFACE : STUDY OF NONEQUILIBRIUM MOLECULAR DYNAMICS

Quantitative Nanoscale Local Strain Profiling in Embedded Sige Metal-Oxide-Semiconductor Structures

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction