Abstract:We present a detailed analysis and comparison of four models describing the extension of the electron-energy loss function from the optical limit of q -> 0 into the (q,omega) plane to obtain the bulk and surface terms of differential inverse inelastic mean free paths. We found that the best model that describes accurately and times efficiently the calculation of the energy loss function of free-electron-like materials is the combination of the Penn algorithm [Phys. Rev. B 35, 482 (1987)] with the Ritchie-Howie method [Philos. Mag. 36, 463 (1997)]. Applying this model in our reverse Monte Carlo method, we determined, with high-precision, electron-energy loss functions of silicon and germanium based on the theoretical analysis of the high-energy resolution reflected electron energy loss spectroscopy (REELS) spectra, measured at 3, 4, and 5 keV incident electron energies. The refractive index n, the extinction coefficient k, and the complex dielectric function (epsilon = epsilon(1) + i epsilon(2)) were calculated from the obtained energy loss function in a wide energy loss range of 0-200 eV. The accuracy of the obtained results is justified with various sum rules. We found that the calculated optical data of Si and Ge fulfill the sum rules with an average accuracy of 0.11% or even better. Therefore, the use of these optical data in materials science and surface analysis is highly recommended for further applications.

Analysis of Dielectric Function of Silicon Films with Spectroscopic Ellipsometry

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Spectroscopic Ellipsometric Study of Size-Controlled Silicon Nano-Crystals in Sio2 Composite Thin Film

Study On Si Films Deposited By Icpcvd Using Spectroscopic Ellipsometry

Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry

The Research of a Method to Obtain the Optical Parameters of Semiconductor Films

Analysis of Controlled Mixed-Phase (amorphous+microcrystalline) Silicon Thin Films by Real Time Spectroscopic Ellipsometry

Optical and Structural Characterization of SnO2:F/SiCxOy Tandem Thin Films by Spectroscopic Ellipsometry

Accurate Analysis of Ellipsometric Data for Thick Transparent Films

Mixed polarization in determining the film thickness of a silicon sphere by spectroscopic ellipsometry

Research on Dynamic Reflecting Spectroscopic Ellipsometry and Its Application in the Measurement of Thin Films

Spectroscopic ellipsometry utilizing frequency division multiplexed lasers

Determination of the Optical Constants of Solar-Control Amorphous Silicon Thin Films on Float Glass

Optical-Property Profiling of SiO<sub>2</sub> Films Containing Si Nanocrystals Formed by Si<sup>+</sup> Implantation

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Sp(3)/Sp(2) Ratio in Amorphous-Carbon Thin Film by Spectroscopic Ellipsometry

Optical Properties of Silicon and Germanium Determined by High-Precision Analysis of Reflection Electron Energy Loss Spectroscopy Spectra

Spectroscopic Ellipsometry Characterization of Optical Properties for Sol-Gel Derived SiO2 Film

The Microstructure and Optical Properties of P-Type Microcrystalline Silicon Thin Films Characterized by Ex-Situ Spectroscopic Ellipsometry

Metrology of Sub-0.5 Mu M Silicon Epitaxial Films

Spectroscopic Ellipsometry Measurements on an Anisotropic Crystal: 6H-Sic