Cross-Order Echelle Grating Triplexer Based on Amorphous Silicon Nanowire Platform

Ning Zhu,Jun Song,Lech Wosinski,Sailing He

2008-01-01

Abstract:We present fabrication and measurement results of an ultracompact silicon-on-insulator-based echelle-grating triplexer, which uses different diffraction orders to cover a large spectral range from 1.3 mum to 1.5 mum, with a footprint of 150 mum times 200 mum.

What problem does this paper attempt to address?

Experimental Demonstration of a Cross-Order Echelle Grating Triplexer Based on an Amorphous Silicon Nanowire Platform.

Ning Zhu,Jun Song,Lech Wosinski,Sailing He,Lars Thylen

DOI: https://doi.org/10.1364/ol.34.000383

2009-01-01

Abstract:We present the design, fabrication, and characterization of an ultracompact silicon-on-insulator-based echelle grating triplexer. It is based on the cross-order design, which utilizes different diffraction orders to cover a large spectral range from 1.3 to 1.5 mu m with three channels located at 1310, 1490, and 1550 nm and with a footprint of 150 mu m X 130 mu m. (c) 2009 Optical Society of America
Total Internal Reflection Type Echelle Grating Demultiplexer Based on Amorphous Silicon Nanowire Platform

Ning Zhu,Jun Song,Lech Wosinski,Sailing He

DOI: https://doi.org/10.1117/12.802558

2008-01-01

Abstract:In this paper we present measurement results of an ultracompact echelle-grating demultiplexer based on silicon-on-insulator nanowire platform, in which we introduced a total internal reflection design of the grating facets to improve the diffraction efficiency. An average increase of the diffraction efficiency with 3.7dB is observed for the 3 channels compared to a normal design.
Ultra-compact arrayed waveguide grating triplexer based on silicon-on-insulator platform

Jun Zou,Xianxin Jiang,Tingting Lang,Jianjun He

DOI: https://doi.org/10.1109/CLEOPR.2013.6600263

2013-01-01

Abstract:We have demonstrated an ultra-compact birefringence-compensated arrayed waveguide grating (AWG) triplexer based on silicon nanowire waveguide. The cross-order design is employed and the device has a small footprint of 0.18×0.12 mm2. The normalized losses for TM polarization for three channels are less than 4 dB with the crosstalk better than 18 dB. The polarization dependent wavelength shift (PDλ) is less than 2.5 nm for three channels operating at the wavelength range of 1490-1550 nm by using angled star couplers in combination with different diffraction orders for the two polarizations.
Echelle Diffraction Grating Based High-Resolution Spectrometer-on-chip on SiON Waveguide Platform

Xiao Ma,Mingyu Li,Jian-Jun He

DOI: https://doi.org/10.3788/col201311.032501

IF: 2.56

2013-01-01

Chinese Optics Letters

Abstract:We demonstrate a spectrometer-on-a-chip based on echelle diffraction grating (EDG) in silicon oxynitride (SiON) waveguides for operation in 850nm wavelength range. The chip comprises 120 output waveguides with 0.25 nm spacing and has a size of only 11mm×6mm. The measured adjacent channel crosstalk is close to 30 dB, the 3dB channel bandwidth is ≪ 0.1 nm and the channel non-uniformity is 3dB for wavelength from 838nm to 852nm.
Ultra-Compact Birefringence-Compensated Arrayed Waveguide Grating Triplexer Based on Silicon-On-Insulator

jun zou,xianxin jiang,xiang xia,tingting lang,jianjun he

DOI: https://doi.org/10.1109/JLT.2013.2261857

2013-01-01

Abstract:We demonstrate an ultra-compact birefringence- compensated arrayed waveguide grating (AWG) triplexer for application in optical network units (ONUs) based on silicon nanowire waveguides. The cross-order design is employed to cover three operating wavelengths of 1310, 1490 and 1550 nm for the triplexer. The large birefringence of the silicon-on-insulator (SOI) waveguide is compensated by using angled star coupler design in combination with different diffraction orders for TE and TM modes. The device has a small footprint of only 0.18×0.12 mm2. The excess loss for TM polarization for three channels is 3 ~ 4 dB and the crosstalk is better than -18 dB. The polarization dependent wavelength shift (PDλ) is reduced from about 370 nm to less than 2.5 nm for wavelength channels at 1490-1550 nm.
Etched Diffraction Grating Demultiplexers Based on Amorphous Silicon Nanowire Platform

Ning Zhu,Jun Song,Lech Wosinski,Sailing He

DOI: https://doi.org/10.1364/aoe.2008.sue4

2008-01-01

Abstract:We present some theoretical and experimental results of etched diffraction grating demultiplexer based on amorphous silicon nanowire platform, including issues with polarization sensitivity, diffraction efficiency and an application to triplexer.
An Eight-Channel 400 GHz-Spacing Etched Diffraction Grating Multi/Demultiplexer on a Nanophotonic Silicon-on-Insulator Platform

shen ao,qiu chen,hu ting,xu chao,jiang xiaoqing,li yubo,yang jianyi

DOI: https://doi.org/10.1088/0256-307X/30/8/084204

2013-01-01

Chinese Physics Letters

Abstract:An eight-channel 400 GHz-spacing planar waveguide multi/demultiplexer employing etched diffraction grating is designed and fabricated on a silicon-on-insulator platform with a 220 nm thick top layer. The design parameters are optimized by scalar diffraction simulation to obtain optimal performance with a small footprint of only 0.75 mm(2). A bi-level adiabatic taper is used to connect the input/output waveguide and the slab waveguide so as to reduce the insertion loss and the broadening of the diffraction angle of the propagating light. The device is fabricated in a two-step process with E-beam lithography and dry etching, and the alignment accuracy is 10 nm or even better. Measurements show that the insertion loss is 7.35 dB and the crosstalk between adjacent channels is about -15 dB. Ways to improve the performance are also investigated in detail.
Silicon-On-Insulator Based Miniature Integrated Spectrometer Using Echelle Diffraction Grating

Li Qin,Lei Wang,Ming-Yu Li,Jian-Jun He

2011-01-01

Abstract:The design of an on-chip spectrometer based on a silicon-on-insulator planar echelle diffraction grating (EDG) is presented. It has 129 channels, 0.25 nm channel spacing, and 0.1 nm FWHM bandwidth. The spectral range is 1534 nm~1566 nm. The size of the chip is about 0.7 cm×1 cm.
InP Based Echelle Diffraction Grating Multiplexer with Flat-Passband

Lili Le,Yayan Chu,Zhipeng Hu,Jinyan Song,Jian-Jun He

DOI: https://doi.org/10.1109/icocn.2017.8121401

2017-01-01

Abstract:An echelle diffraction grating (de)multiplexer with arc shaped grating teeth, based on a multi-guide vertical integration platform in InP is presented. The device can be applied to the 100GBASE-LR4 Ethernet systems, the crosstalk is better than -19 dB. By adjusting grating facets, the 3-dB spectral bandwidth is increased to 2.2 nm compared with 1.7 nm in a conventional design with a loss penalty less than 2 dB. And the nonuniformity is reduced form 1.7 dB to 0.68 dB.
Third Order Silicon (si) Nitride Side-Walled Grating Using Silicon-on- Insulatir (SOI)

C. E. Png,S. T. Lim,E. P. Li,A. J. Danner

DOI: https://doi.org/10.1117/12.888579

2010-01-01

Abstract:In this work, we demonstrate three-dimensional (3D) simulations of a third order silicon-based grating with full-width-half-maximum (FWKM) reflection bandwidth of 4nm. This is more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. In order to make this device active, we included an active element, to be inserted in the silicon layer by way of a pin layout. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz.
Compact Silicon 2D Asymmetric Waveguide Grating for Wavelength Triplexing

Chao Li,Haifeng Zhou,Mingbin Yu,Guo-Qiang Lo

DOI: https://doi.org/10.1109/edssc.2015.7285228

2015-01-01

Abstract:We designed and demonstrated a silicon 2D asymmetric waveguide grating with wavelength triplexing to offer very small-form factor for ready integration with other silicon photonic components. The grating fabricated with CMOS-compatible technology demonstrates wavelength triplexing capability (near 1310/1490/1550 nm) with minimum coupling loss of -5.7 dB. The 3 dB bandwidth for different wavelength bands is larger than 40 nm. These distinct attributes will bring compact, cost-effective optical transceivers a step closer towards market deployment to support advanced optical networks.
An Echelle Diffraction Grating for Imaging Spectrometer

Minyue Yang,Han Wang,Mingyu Li,Jian-Jun He

DOI: https://doi.org/10.1117/12.2236666

2016-01-01

Abstract:We demonstrate an echelle diffraction grating (EDG) of 17 input waveguides and 33 output waveguides. For each input waveguide, only 17 of 33 output waveguides are used, receiving light ranging from 1520 nm to 1600 nm wavelength. The channel spacing of the EDG is 5 nm, with loss of -6dB and crosstalk of -17dB for center input waveguide and -15dB for edge input waveguides. Based on the 3 mu m SOI platform the device is polarization insensitive. As a simple version of EDG spectrometer it is designed to be a part of the on-chip spectroscopic system of the push-broom scanning imaging spectrometer. The whole on-chip spectrometer consists of an optical on-off switch array, a multi-input EDG and detector array. With the help of on-off switch array the multiple input waveguides of the EDG spectrometer could work in a time division multiplexed fashion. Since the switch can scan very fast (less than 10 microseconds), the imaging spectrometer can be operated in push-broom mode. Due to the CMOS compatibility, the 17_channel EDG scales 2.5x3 mm(2). The full version of EDG spectrometer is designed to have 129 input waveguides and 257 output waveguides (129 output channel for each input waveguide), working in wavelength ranging from 1250 nm to 1750 nm, and had similar blazed facet size with the 17_channel one, which means similar fabrication tolerance in grating facets. The waveguide EDG based imaging spectrometer can provide a low-cost solution for remote sensing on unmanned aerial vehicles, with advantages of small size, light weight, vibration-proof, and high scalability.
Compact Arrayed Waveguide Grating Demultiplexers Based on Amorphous Silicon Nanowires

liu liu,daoxin dai,matteo dainese,lech wosinski,sailing he

DOI: https://doi.org/10.1364/nano.2006.nwb5

2006-01-01

NANO

Abstract:A novel and flexible technology for ultra compact AWGs based on amorphous silicon nanowires is presented. A 4×4 AWG with a total dimension of 50×50µm was fabricated. 11nm channel spacing and -10dB crosstalk was obtained.
Novel High‐Resolution and Large‐Bandwidth Micro‐Spectrometer Using Multi‐Input Counter‐Propagating Arrayed Waveguide Grating and Dual‐Wavelength Grating Coupler on Silicon on Insulator

Jun Zou,Lingfeng Li,Changhui Wang,Yuan Zhuang,Xuyang Wang,Jinhua Hu,Shaobo Luo,Jian-Jun He

DOI: https://doi.org/10.1002/lpor.202200355

2022-01-01

Laser & Photonics Review

Abstract:Miniaturized micro‐spectrometers with high‐resolution and large‐bandwidth are of great importance for on‐site spectroscopic analysis applications. Here, a novel high‐resolution and large‐bandwidth micro‐spectrometer is presented, which operates at dual‐wavelength band by utilizing a (N + 3) × (N + 3) arrayed waveguide grating (AWG) and three dual‐wavelength grating couplers on a silicon‐on‐insulator (SOI) platform. The AWG working in a counter‐propagating manner can be viewed as two 3 × N AWGs, and the dual‐wavelength grating coupler acts as a prefilter. Three time‐division‐multiplexing inputs with wavelength spacings of 4/3 times that of N output waveguides are employed to improve the resolution of the micro‐spectrometer. Combining the corresponding outputs of three inputs, a micro‐spectrometer with resolution enhanced to one‐third wavelength spacing of output waveguides and effective channel number enlarged to 3 × (N − 2) is achieved, only using N output channels at each wavelength band. A micro‐spectrometer with 63 effective channels and resolutions of 0.5 and 0.442 nm at 1550 and 1310 nm bands, respectively, is experimentally demonstrated. The footprint of the fabricated micro‐spectrometer is 2 × 0.81 mm2, with measured on‐chip losses of −4.6 to −2.8 dB (−7.0 to −3.1 dB) and crosstalk levels < −18.5 (−16.8) dB at the 1550 (1310) nm band.
High-efficiency Wideband SiNx-on-SOI Grating Coupler with Low Fabrication Complexity.

Pengfei Xu,Yanfeng Zhang,Zengkai Shao,Lin Liu,Lidan Zhou,Chunchuan Yang,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/ol.42.003391

IF: 3.6

2017-01-01

Optics Letters

Abstract:The chip-fiber grating coupler is a fundamental building block in integrated photonics, providing convenient on-wafer testing and packaging. Couplers based on a silicon nitride (SiNx) material platform can achieve wider bandwidths than silicon-based couplers, but suffer from lower efficiency due to the relative low material refractive index. The efficiency of the SiNx grating coupler can be improved by using high-reflectivity silicon grating reflectors underneath. However, such a silicon grating reflector requires several fabrication steps, including lithography, etching, high precision alignment (HPA), and chemical mechanical polishing (CMP). In this Letter, we demonstrate an easy-to-fabricate SiNx-on-SOI transverse-electric mode grating coupler requiring only one patterning step (grating alone), and without the need for HPA and CMP. A coupling coefficient of -2.5 dB and 1-dB-bandwidth of 65 nm has been experimentally measured.
Design Analysis and Experimental Verification of Cross-Order Awg Triplexer Based on Silica-On-Silicon

Xufeng Lin,Tingting Lang,Jian-Jun He

DOI: https://doi.org/10.1109/jlt.2011.2129491

IF: 4.7

2011-01-01

Journal of Lightwave Technology

Abstract:A compact arrayed waveguide grating triplexer with silica waveguides on silicon is designed, fabricated, and characterized. Different cross-order designs, which utilize different diffraction orders to cover a large spectral range from 1310 to 1550 nm, are analyzed in detail. B-Ge codoped upper cladding is used to facilitate the gap filling between the waveguides to reduce the loss and the polarization sensitivity. The measured spectra confirmed the operation principle of the cross-order arrayed waveguide grating design, with channel wavelengths and passbands consistent with simulations.
High-Resolution Compact On-Chip Spectrometer Based on an Echelle Grating With Densely Packed Waveguide Array

Keqi Ma,Kaixuan Chen,Ning Zhu,Liu Liu,Sailing He

DOI: https://doi.org/10.1109/JPHOT.2018.2888592

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:We design a 121-channel on-chip spectrometer based on an echelle grating with densely packed waveguide array on 220-nm silicon-on-insulator platform. It offers a high spectral resolution of 0.5 nm in a 3 · 3 mm2 footprint, covering a spectral range of 60 nm near the central wavelength of 1550 nm. We fabricate the spectrometer with 20 channels for verification of the design, which is limited by our...
A 8×8 Arrayed Waveguide Grating Router Based on SOI Platform

Yue Wu,Ti-ng Ting Lang,Jinyan Song,Jian-Jun He

DOI: https://doi.org/10.1109/icocn.2017.8121403

2017-01-01

Abstract:We design and experimentally fabricate a 8×8 arrayed waveguide grating router(AWGR) with a channel spacing of400 GHz based on silicon-on-insulator (SOI) platform. The arrayed waveguide region of this device is horseshoe-shaped to realize a small footprint of 730 μm × 580 μm. Experimental results show good cyclic performance. The crosstalk and insertion loss are about -21 dB and 2.7 dB, respectively. This compact device can be used in optical interconnect systems.
Cmos-Compatible Integrated Spectrometer Based on Echelle Diffraction Grating and Msm Photodetector Array

Xiao Ma,Mingyu Li,Jian-Jun He

DOI: https://doi.org/10.1109/jphot.2013.2250944

IF: 2.4

2013-01-01

IEEE Photonics Journal

Abstract:We demonstrate an integrated spectrometer-on-a-chip composed of an echelle diffraction grating (EDG) and metal-semiconductor-metal (MSM) waveguide photodetector array based on silicon-on-insulator (SOI). In the passive section, silicon oxynitride (SiON) is chosen as the material for the waveguide core and is deposited after selectively removing the top silicon layer of the SOI wafer. The buried silicon dioxide layer of the SOI wafer functions as the lower cladding for the SiON core waveguide. In the active section, the MSM photodetector array is fabricated on the top silicon layer of the SOI waveguide with a pitch width of 7.5 mu m. With the butt-coupling structure, a responsivity of 0.41 A/W is obtained at 850 nm. Based on the CMOS-compatible fabrication process, we have fabricated a 60-channel spectrometer with a chip size of 9 mm x 6 mm operating around 850 nm. The measured channel spacing is 0.494 nm, with an adjacent channel crosstalk around 18 dB. The channel nonuniformity is less than 1.5 dB. The CMOS-compatible spectrometer with integrated silicon photodetector array can provide a low-cost solution for high-resolution on-chip spectral analysis for visible and near-infrared light with the wavelength below 1100 nm.
Aberration corrected ultra-compact ultra-large angle curved grating multiplexer and demultiplexer on SOI platform

y huang,jianglin ma,seokho chang,qian zhao,s t ho

DOI: https://doi.org/10.1109/cleo.2008.4551908

2008-01-01

Abstract:We describe a novel aberration free etched diffraction grating on SOI platform for on chip wavelength multiplexing and demultiplexing. Initial fabrication with 1 micron slit gives 200 GHz channel pass band with < 0.2 mm2 chip size.

Cross-Order Echelle Grating Triplexer Based on Amorphous Silicon Nanowire Platform

Experimental Demonstration of a Cross-Order Echelle Grating Triplexer Based on an Amorphous Silicon Nanowire Platform.

Total Internal Reflection Type Echelle Grating Demultiplexer Based on Amorphous Silicon Nanowire Platform

Ultra-compact arrayed waveguide grating triplexer based on silicon-on-insulator platform

Echelle Diffraction Grating Based High-Resolution Spectrometer-on-chip on SiON Waveguide Platform

Ultra-Compact Birefringence-Compensated Arrayed Waveguide Grating Triplexer Based on Silicon-On-Insulator

Etched Diffraction Grating Demultiplexers Based on Amorphous Silicon Nanowire Platform

An Eight-Channel 400 GHz-Spacing Etched Diffraction Grating Multi/Demultiplexer on a Nanophotonic Silicon-on-Insulator Platform

Silicon-On-Insulator Based Miniature Integrated Spectrometer Using Echelle Diffraction Grating

InP Based Echelle Diffraction Grating Multiplexer with Flat-Passband

Third Order Silicon (si) Nitride Side-Walled Grating Using Silicon-on- Insulatir (SOI)

Compact Silicon 2D Asymmetric Waveguide Grating for Wavelength Triplexing

An Echelle Diffraction Grating for Imaging Spectrometer

Compact Arrayed Waveguide Grating Demultiplexers Based on Amorphous Silicon Nanowires

Novel High‐Resolution and Large‐Bandwidth Micro‐Spectrometer Using Multi‐Input Counter‐Propagating Arrayed Waveguide Grating and Dual‐Wavelength Grating Coupler on Silicon on Insulator

High-efficiency Wideband SiNx-on-SOI Grating Coupler with Low Fabrication Complexity.

Design Analysis and Experimental Verification of Cross-Order Awg Triplexer Based on Silica-On-Silicon

High-Resolution Compact On-Chip Spectrometer Based on an Echelle Grating With Densely Packed Waveguide Array

A 8×8 Arrayed Waveguide Grating Router Based on SOI Platform

Cmos-Compatible Integrated Spectrometer Based on Echelle Diffraction Grating and Msm Photodetector Array

Aberration corrected ultra-compact ultra-large angle curved grating multiplexer and demultiplexer on SOI platform