Third Order Silicon (si) Nitride Side-Walled Grating Using Silicon-on- Insulatir (SOI)

C. E. Png,S. T. Lim,E. P. Li,A. J. Danner
DOI: https://doi.org/10.1117/12.888579
2010-01-01
Abstract:In this work, we demonstrate three-dimensional (3D) simulations of a third order silicon-based grating with full-width-half-maximum (FWKM) reflection bandwidth of 4nm. This is more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. In order to make this device active, we included an active element, to be inserted in the silicon layer by way of a pin layout. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz.
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