Abstract:The authors report on the real-time monitoring of self-limiting aluminum nitride growth process by using multiwavelength in situ ellipsometry. Aluminum nitride (AlN) thin films were grown on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using trimethylaluminum (TMA) and Ar/N2/H2 plasma as metal precursor and coreactant, respectively. Growth saturation experiments within 100–250 °C temperature range were carried out without interruption as extended single runs featuring 10-cycle subruns for each parameter change. The sensitivity of the multiwavelength ellipsometry provided sufficient resolution to observe not only the minuscule changes in the growth-per-cycle (GPC) parameter, but also the single chemical adsorption (chemisorption) and plasma-assisted ligand removal events. GPC values showed a slight increasing slope within 100–200 °C, followed by a stronger surge at 250 °C, signaling the onset of thermal decomposition. The real-time dynamic in situ monitoring revealed mainly the following insights into the HCPA-ALD process of AlN: (i) film growth rate and TMA chemisorption amount exhibited plasma power dependent saturation behavior, which was also correlated with the substrate temperature; (ii) time-dependent refractive index evolution indicated a nonconstant relationship: a faster increase within the first ∼100 cycles followed by a slower increase as the AlN film gets thicker; and (iii) a considerable improvement in crystallinity was observed when the substrate temperature exceeded 200 °C. Besides in situ optical characterization, ex situ optical, structural, and chemical characterization studies were also carried out on 500-cycle grown AlN films as a function of substrate temperature. All AlN samples displayed a single-phase wurtzite polycrystalline character with no detectable carbon and relatively low (<5%) oxygen content within the bulk of the films. Moreover, regardless of the deposition temperature, HCPA-ALD grown AlN films exhibited highly stoichiometric elemental composition.

A Comparison Between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium As the Aluminium Precursors

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

High-quality AlN growth: a detailed study on ammonia flow

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Preparing aluminum nitride thin film by atomic layer deposition

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Atomic Layer Deposition of Aluminum (111) Thin Film by Dimethylethylaminealane Precursor

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Surface chemistry in atomic layer deposition of AlN thin films from Al(CH3)3 and NH3 studied by mass spectrometry

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on C-Plane Sapphire by MOCVD

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition

Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Optimization of parameters for the preparation of AlN powder/thin films by tris(N,N,n',n'-tetramethylethylenediamine) al(III) chloride precursor

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere