Abstract:Aluminum oxide and aluminum nitride-containing films were grown by atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PE-ALD) by employing an under-utilized tris(dimethylamido)aluminum(III) precursor. This compound has not been reported as a precursor for ALD of alumina previously, and has only been reported as an AlN precursor for a thermal process using ammonia as a coreagent. Thermogravimetric analysis demonstrates its excellent volatility and thermal stability, both of which are ideal characteristics for an ALD precursor. Aluminum oxide films were deposited thermally using water as a coreagent. By x-ray photoelectron spectroscopy, the films appeared nearly pristine with only adventitious carbon on the surface accumulated postdeposition that was easily removed with 2 min of Ar+ sputtering. The rest of the films contained a very low 1.4% impurity of carbon. Aluminum nitride films were attempted using the same aluminum precursor with nitrogen plasma as a coreagent; they contained large amounts of oxygen due to ambient exposure, possible oxidation during characterization, or the presence of incidental oxygen during the deposition of AlN, which allowed the formation of an aluminum oxynitride. Though the composition was not stoichiometrically AlN, the films also contained ∼1% carbon impurities, which is an improvement over many other AlN films reported, particularly those using TMA as a precursor. This precursor shows great promise for the deposition of low-impurity or impurity-free aluminum nitride by PE-ALD.

Optimization of parameters for the preparation of AlN powder/thin films by tris(N,N,n',n'-tetramethylethylenediamine) al(III) chloride precursor

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design

Preparing aluminum nitride thin film by atomic layer deposition

High-quality AlN growth: a detailed study on ammonia flow

Facile synthesis of monodisperse aluminum nitride microspheres

Surface chemistry in atomic layer deposition of AlN thin films from Al(CH3)3 and NH3 studied by mass spectrometry

Smooth Etching of Epitaxially Grown AlN Film by Cl2/BCl3/Ar-based Inductively Coupled Plasma

Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

Synthesis of AlN nanocrystalline powders

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

Some properties of aluminium-nitride powder prepared by metal-organic chemical vapour deposition

Preparation of Nano-aluminum Powder in AlCl3-EMIC Ionic Liquid

Rate-limiting process and growth kinetics of AlN thin films by microwave plasma CVD with AlBr3-NH3-N2 system

Synthesis of Ultrafine AlN Powders in an Al-OC-N System

Toward homogenous AlN via reaction of Al nanoparticles with N 2 and NH 3 : Reactive molecular dynamics simulation

A Mass Spectrometrical Surface Chemistry Study of Aluminum Nitride ALD from Tris-Dimethylamido Aluminum and Ammonia

Structural and surface analysis of chemical vapor deposited boron doped aluminum nitride thin film on aluminum substrates

Synthesis of nearly spherical AlN particles by an in-situ nitriding combustion route

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere