Abstract:In this study, shear rheological polishing was used to polish the Si surface of six-inch 4H-SiC wafers to improve polishing efficiency. The surface roughness of the Si surface was the main evaluation index, and the material removal rate was the secondary evaluation index. An experiment was designed using the Taguchi method to analyze the effects of four critical parameters (abrasive particle size, abrasive particle concentration, polishing speed, and polishing pressure) on the Si surface polishing of SiC wafers. By evaluating the experimental results for the signal-to-noise ratio, the weight of each factor was calculated using the analysis of variance method. The optimal combination of the process parameters was obtained. Below are the weightings for the influence of each process on the polishing result. A higher value for the percentage means that the process has a greater influence on the polishing result. The wear particle size (85.98%) had the most significant influence on the surface roughness, followed by the polishing pressure (9.45%) and abrasive concentration (3.25%). The polishing speed had the least significant effect on the surface roughness (1.32%). Polishing was conducted under optimized process conditions of a 1.5 μm abrasive particle size, 3% abrasive particle concentration, 80 r/min polishing speed, and 20 kg polishing pressure. After polishing for 60 min, the surface roughness, Ra, decreased from 114.8 to 0.9 nm, with a change rate of 99.2%. After further polishing for 60 min, an ultrasmooth surface with an Ra of 0.5 nm and MRR of 20.83 nm/min was obtained. Machining the Si surface of 4H-SiC wafers under optimal polishing conditions can effectively remove scratches on the Si surface of 4H-SiC wafers and improve the surface quality.

Study on Material Damage Process of Si under Rotating Disk Test

Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

Effect of Roughness and Wettability of Silicon Wafer in Cavitation Erosion

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Cutting Speed Dependence of Material Removal Mechanism for Monocrystal Silicon

Study on Subsurface Damage of Wafer Silicon Containing Through Silicon Via in Thinning

Experimental Study on Shear Rheological Polishing of Si Surface of 4H-SiC Wafer

Surface damage in wire-cut silicon wafers

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

Subsurface Damage and Bending Strength Analysis for Ultra-Thin and Flexible Silicon Chips

Mechanical effect of abrasives on silicon surface in chemo-mechanical grinding

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

A Study on the Surface Quality and Damage Properties of Single-Crystal Silicon Using Different Post-Treatment Processes

Experimental Study on the Influence of Wire-Saw Wear on Cutting Force and Silicon Wafer Surface

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

The study of the resin-bond diamond wheel for IC silicon wafer nanoscale roughness back grinding