Abstract:At present, wire sawing technology is the primary slicing method used for certain brittle materials, including monocrystalline silicon, sapphire, and silicon carbide. The surface quality of the sawn wafers significantly impacts subsequent machining processes, such as grinding and polishing. A theoretical model was developed to predict the amount of material removed per unit length of wire during the slicing of circular workpieces by a wire saw with reciprocating and rocking functions. Experiments were conducted during this study in which crystal ingots were sliced using a multi-wire saw, and the amount of material removed per unit length of wire was determined at different cutting positions on the workpiece cross-section. The surface roughness of each crystal wafer was measured systematically. The experimental results revealed that the surface roughness values measured at different points at the same y -coordinate position on a single wafer were approximately equal. However, the surface roughness was greatest on both the initial and final cutting edges and gradually decreased toward the wafer center. The surface roughness was also greatest for the wafer cut nearest to the new wire side, though it gradually decreased for wafers cut nearer to the center of the workpiece and remained relatively consistent from the middle wafer to the wafer cut nearest to the used wire side. The results also indicated that both the material removed per unit length of wire and the surface roughness of the wafer decreased with increases in the wire speed. The relationship between the material removed per unit length of wire and the surface roughness was approximately linear. When the material removed per unit length of wire was set to 0.00333 mm 3 /m, the average wafer surface roughness was 0.45 μm.

Surface damage in wire-cut silicon wafers

Surface formation, morphology, integrity and wire marks in diamond wire slicing of mono-crystalline silicon in the photovoltaic industry

A Microscopic Tem Study Of The Defect Layers In Cast-Mono Crystalline Silicon Wafers Induced By Diamond-Wire Sawing

Prediction of Subsurface Microcrack Damage Depth Based on Surface Roughness in Diamond Wire Sawing of Monocrystalline Silicon

Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing

Study on Subsurface Damage of Wafer Silicon Containing Through Silicon Via in Thinning

Effect of Size Distribution of SiC Particles on Silicon Crystals Wire Sawing Process

Experimental Study on the Influence of Wire-Saw Wear on Cutting Force and Silicon Wafer Surface

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

Experimental study regarding the surface roughness of circular crystal wafers sliced by a multi-wire saw with reciprocating and rocking functions

The effect of cut depth and distribution for abrasives on wafer surface morphology in diamond wire sawing of PV polycrystalline silicon

Evaluation of Fixed Abrasive Diamond Wire Sawing Induced Subsurface Damage of Solar Silicon Wafers

Surface damage and metal-catalyzed chemical etching investigation of multicrystalline silicon by diamond wire sawing

A TEM STUDY ON SURFACE DAMAGE CAUSED BY CUTTING ON SEMICONDUCTIVE MATERIALS

X-ray Scattering from a Rough Surface and Damaged Layer of Polished Wafers

Fractal analysis on the surface topography of Monocrystalline silicon wafers sawn by diamond wire

Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

Study on Material Damage Process of Si under Rotating Disk Test

Revealing Silicon Crystal Defects by Conductive Atomic Force Microscope

X-ray Diffraction Analysis of Damaged Layer During Polishing of Silicon Carbide

Effect of Roughness and Wettability of Silicon Wafer in Cavitation Erosion