High-efficiency AlGaInP LED with low thermal resistance fabricated by electroplating

Wei Wei,Yan-Jun Han,Luo, Yi

DOI: https://doi.org/10.1109/INOW.2007.4302943

2007-01-01

Abstract:Higher light extraction efficiency AlGaInP-based LEDs were fabricated by using metallic substrate based on Cu and Cr electroplating technique, novel metal reflector and surface micro-structures. © 2007 IEEE.

What problem does this paper attempt to address?

High-output power GaN-LED based on surface plasmon enhancement

Jun Zhu,Bishi Ying,Liuli Qin

DOI: https://doi.org/10.1007/s12596-022-01046-0

IF: 2.1

2023-01-01

Journal of Optics

Abstract:In recent years, metallic nano-light-emitting diode (LED) arrays have gained wide attention as new-generation lighting materials. This study evaluates the optical properties of triangular array Ag nanodisc GaN-LED and analyses its effects on internal radiation and external light extraction of LED by changing the cycle and height of the Ag nanodisc. We use FDTD software for simulation. The results showed that the increase in the spontaneous emission rate depended on the localised surface plasmon (LSP) generated by the Ag nanodisc and the multiple quantum well layer, considering the coupling between the surface plasmon and the dipole enhanced the internal energy. Owing to the optimal structural parameters, the spontaneous emission rate was enhanced by 4.79 times, and the power integral of the internal radiation source increased from 0.037 to 0.177. Furthermore, the enhanced energy from coupling did not radiate outward and was limited to the surface of the Ag nanodisc. Additionally, a two-dimensional photonic crystal structure was embedded in the p-layer to transform the LSP into a radiation plasmon. When the transmittance was 0.32, the top surface power integral increased from 0.021 to 0.131, light output power increased by 5.47 times, and the factor of light extraction efficiency increased by 1.79 times. These results provide practical values that can be applied in optimising the design of high-performance GaN-based LED.
High Thermal Conductive AlN Substrate for Heat Dissipation in High-Power LEDs

Dong Huang,Zheng Liu,Jonathan Harris,Xungang Diao,Guanghua Liu

DOI: https://doi.org/10.1016/j.ceramint.2018.09.171

IF: 5.532

2018-01-01

Ceramics International

Abstract:Heat dissipation is important in high-power LEDs and depends on the thermal conductivity of the substrate. This work investigates the heat dissipation performance of AlN ceramic substrate in high-power LEDs. AlN substrate with a thermal conductivity of 193 W m(-1) K-1 and flexural strength of 380 MPa has been prepared by pressureless sintering, and then bonded with a Cu film by direct plating copper (DPC). By using the AlN substrate for heat dissipation, the junction temperature (78 degrees C) is lowered by 42 degrees C compared with the case using Al2O3 substrate and well below the upper limit of the operation temperature of the LEDs. From the experimental results, AlN ceramic substrate with a high thermal conductivity is a promising candidate for heat dissipation in high-power LEDs.
High-reflectivity composite metal substrate for high-power IRLED

L.L. Han,C.H. Du,W.H. Gong,X.S. Tang,Z.W. Wang,R.Z. Zhai,Z.Q. Jia

DOI: https://doi.org/10.1016/j.rinp.2024.107784

IF: 4.565

2024-05-29

Results in Physics

Abstract:Substrate transfer technology is a common way to prepare high-power infrared light emitting diode (IRLED), which seriously affects the photoelectric performance and reliability of LED. In this paper, a preparation technology of LED with composite metal substrate is presented. Based on electroplating and electron beam evaporation, AuGeNi/Au(1)/Au(2)/Cu composite metal substrate with thickness of 70 nm/30 nm/100 nm/45 μm was prepared, and low resistivity of 4.65 × 10 −6 Ω⋅cm 2 and high reflectance of 91.3 % were obtained. Compared with the original GaAs substrate, the light output power (LOP) of electroluminescence is increased by 89.2 % at the current of 300 mA.

physics, multidisciplinary,materials science
High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Tae-il Kim,Yei Hwan Jung,Jizhou Song,Daegon Kim,Yuhang Li,Hoon-sik Kim,Il-Sun Song,Jonathan J. Wierer,Hsuan An Pao,Yonggang Huang,John A. Rogers

DOI: https://doi.org/10.1002/smll.201200382

IF: 13.3

2012-01-01

Small

Abstract:A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from ~1 mm × 1 mm to ~25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.
The design and fabrication of nanostructure on p-type GaN surface for GaN-based LEDs with high light extraction efficiency

XianPeng Zhang,Yanjun Han,Yi Luo,XiaoLin Xue,Jin Huang

DOI: https://doi.org/10.1109/INOW.2007.4302948

2007-01-01

Abstract:The parameters of nanostructure on p-GaN surface for light extraction efficiency of GaN based LEDs were studied by using Monte-Carlo ray tracing simulation, and nanostructures were fabricated by using interferential exposure and ICP dry etching.
Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Jun Zhu,Haosu Zhang,Zhendong Zhu,Qunqing Li,Guofan Jin

DOI: https://doi.org/10.1016/j.optcom.2014.02.011

IF: 2.4

2014-01-01

Optics Communications

Abstract:This paper proposes a surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating. This structure contains a SiO2 film, a Ag film and a HfO2 film sequentially coated on the rectangularly-patterned p-GaN layer. The Ag film is used to enhance the internal quantum efficiency. The HfO2 cover-layer symmetrizes the distribution of refractive index besides the Ag film to improve the light extraction efficiency and surface-plasmon (SP) extraction efficiency. The inserted SiO2 layer is utilized to further improve the SP extraction efficiency. The properties of SP modes and Purcell effect in this structure are investigated. The photoluminescence experiments demonstrate that its peak intensity of top-emission is about 2.5 times greater than that from the reference structure covered by a single-layer Ag film on the rectangularly-patterned p-GaN layer.
Design and Fabrication of High-Index-contrast Self-Assembled Texture for Light Extraction Enhancement in LEDs.

Xing Sheng,Lirong Zeng Broderick,Juejun Hu,Li Yang,Anat Eshed,Eugene A. Fitzgerald,Jurgen Michel,Lionel C. Kimerling

DOI: https://doi.org/10.1364/oe.19.00a701

IF: 3.8

2011-01-01

Optics Express

Abstract:We developed a high-index-contrast photonic structure for improving the light extraction efficiency of light-emitting diodes (LEDs) by a self-assembly approach. In this approach, a two-dimensional grating can be non-lithographically integrated on the top of virtually any types of LEDs with controlled structural parameters and material indices. As a proof of concept, our designed photonic structure was implemented on a GaAs double heterojunction LED. Using numerical electromagnetic simulations, we explored the effects of the structural parameters (the grating period, layer thickness and material indices) on the device performances, followed by fabrication through a self-assembled porous alumina as a template. Device simulation and experimental results indicate that an optimized high-index-contrast (a-Si / air) grating obtains a much larger efficiency increase than using a low-index SiO2 grating. In addition, the devices maintain a Lambertian radiation pattern with the self-assembled grating. This technique provides an effective and low-cost method for improving LED efficiency.
Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device

Hyung-Joo Lee,Jae-Sam Shim,Jin-Young Park,Lee-Ku Kwac,Chang-Ho Seo

DOI: https://doi.org/10.3390/mi14051053

2023-05-16

Abstract:The Al/Au alloy was investigated to improve the ohmic characteristic and light efficiency of reflective infrared light-emitting diodes (IR-LEDs). The Al/Au alloy, which was fabricated by combining 10% aluminum and 90% gold, led to considerably improved conductivity on the top layer of p-AlGaAs of the reflective IR-LEDs. In the wafer bond process required for fabricating the reflective IR-LED, the Al/Au alloy, which has filled the hole patterns in Si3N4 film, was used for improving the reflectivity of the Ag reflector and was bonded directly to the top layer of p-AlGaAs on the epitaxial wafer. Based on current-voltage measurements, it was found that the Al/Au alloyed material has a distinct ohmic characteristic pertaining to the p-AlGaAs layer compared with those of the Au/Be alloy material. Therefore, the Al/Au alloy may constitute one of the favored approaches for overcoming the insulative reflective structures of reflective IR-LEDs. For a current density of 200 mA, a lower forward voltage (1.56 V) was observed from the wafer bond IR-LED chip made with the Al/Au alloy; this voltage was remarkably lower in value than that of the conventional chip made with the Au/Be metal (2.29 V). A higher output power (182 mW) was observed from the reflective IR-LEDs made with the Al/Au alloy, thus displaying an increase of 64% compared with those made with the Au/Be alloy (111 mW).
Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

Siyuan Cui,Lang Shi,Leonard Jin,Qianxi Zhou,Yuechang Sun,Conglong Jin,jiahui Hu,Kuosheng Wen,Zhou Xu,Shengjun Zhou,Jiahui Hu

DOI: https://doi.org/10.1364/ol.519723

IF: 3.6

2024-03-05

Optics Letters

Abstract:Siyuan Cui, Lang Shi, Leonard Jin, Qianxi Zhou, Yuechang Sun, Conglong Jin, Jiahui Hu, Kuosheng Wen, Zhou Xu, Shengjun Zhou AlGaInP-based light-emitting diodes (LEDs) suffer from a low external quantum efficiency (EQE), which is mainly restrained by the poor ... [Opt. Lett. 49, 1449-1452 (2024)]

optics
Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning P-Algan/p-gan Layer with Ni/Au/Al High-Reflectivity Electrodes

Liubing Wang,Fujun Xu,Jing Lang,Jiaming Wang,Lisheng Zhang,Xueqi Guo,Chen Ji,Xiangning Kang,Xuelin Yang,Xinqiang Wang,Zhixin Qin,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1109/jphot.2023.3250433

IF: 2.4

2023-01-01

IEEE Photonics Journal

Abstract:Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that the thin p-AlGaN/p-GaN layer can reduce the light absorption and the Ni/Au/Al electrodes achieve high reflectivity and Ohmic contact to ensure the enhancement of the light extraction and maintain fine electrical properties. By this approach, the maximum external quantum efficiency of the DUV-LEDs with optimized Ni/Au/Al reflective electrodes is increased by 40%, compared to that with conventional Ni/Au electrodes over the whole current range.
Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective N-Type Electrode Made of Cr/Al

Yang Gao,Qian Chen,Shuang Zhang,Hanling Long,Jiangnan Dai,Haiding Sun,Changqing Chen

DOI: https://doi.org/10.1109/ted.2019.2914487

2019-01-01

Abstract:Mercury-free semiconductor deep ultraviolet light-emitting diodes (DUV-LEDs) still suffer from low power efficiencies due to extremely poor light extraction efficiency. In this paper, a high-reflective electrode is proposed and carefully optimized for making an ohmic contact with the n-type AIGaN layer in the DUV-LEDs (similar to 280 nm). The electrode is made of Cr/120-nm Al metal stack with a different thickness of the Cr layer in a range of 1-20 nm followed by the complete LED fabrication process. We found that the DUV-LED with a 1-nm Cr/120-nm Al electrode obtains maximum light output power and the highest external quantum efficiency, showing an enhancement factor of 40.9% and 25.4%, respectively, in comparison to a conventional LED with an electrode made of 20-nm Cr/120-nm Al. This enhancement is mainly attributed to a higher UV reflectivity of the 1-nm Cr/120-nm Al electrode. Furthermore, a better ohmic contact was achieved in such electrode due to the formation of higher quality Al-Cr and Cr-N alloys in such metal/n-AlGaN junction.
Enhanced Optical–Thermal Performances of High-Power LED by Plated Copper on Thick Film Ceramic Substrate

Tao Luo,Yao Tong,Jicun Lu,Yun Mou,Qing Wang,Jiaxin Liu,Yang Peng,Mingxiang Chen

DOI: https://doi.org/10.1109/ted.2023.3271278

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:Thick printed ceramic substrate (TPC) is a promising technique for the packaging of high-power light-emitting diode (LED). Nevertheless, the incorporation of glass phase and voids in the sintered Ag layer decrease the electrical conductivity and heat dissipation of TPC substrate, which contributes to an increase in the junction temperature of LED. This article demonstrates a novel packaging design to plate copper on the sintered Ag layer of TPC substrate, which was applied to enhance the optical–thermal performances of high-power LED. After plating, the copper layers are well bonded with the Ag layer and the sheet resistance decreases rapidly. With the plated copper on thick film (PCTF) substrate package, the total thermal resistance is 17.45% lower than that with TPC package, while the junction temperature change of LED samples is 8.04 °C and 9.92 °C, respectively. Moreover, the surface temperature of LED sample packaged with PCTF is 11.16% lower than that with TPC at the working current of 1600 mA, and the optical power is 4.79% and 3.2% higher at the working current of 400 and 1200 mA, respectively. The results demonstrate that the optical–thermal performances of LED are enhanced by using the PCTF substrate due to its excellent heat dissipation.

engineering, electrical & electronic,physics, applied
The Improvement of Extractive Emission in InGaAlP Quantum Wells Light Emitting Diodes by Microstructures

隋文辉,章蓓,王大军,栾峰,徐万劲,马晓宇

DOI: https://doi.org/10.3321/j.issn:0479-8023.2003.03.006

2003-01-01

Abstract:To solve the problem of low extractive efficiency in semiconductor light emitting diodes(LED),a proposal of introducing microstructures onto the top of LED was presented.Based on this idea,the InGaAlP quantum wells LEDs with centric ring-grooves microstructures have been successfully prepared by the conventional micro-fabrication.As a result,the vertical extractive light intensity from the novel LED was obviously stronger than that of the LED without microstructures.This success provides a new method for improving extraction efficiency from LED.
Ohmic Contact of High Reflectivity on P-Type GaN

KANG Xiang-ning,ZHANG Bei,HU Cheng-yu,WANG Qi,CHEN Zhi-zhong,ZHANG Guo-yi

DOI: https://doi.org/10.3321/j.issn:1000-7032.2006.01.014

2006-01-01

Chinese Journal of Luminescence

Abstract:GaN-based light-emitting diodes provide higher performance in the short-wavelength part of the visible and ultraviolet spectrum than any other material system. However, there is still a great need for improvement of the extraction efficiency. Because many parts of emitting light of LED suffer absorption of the metal contacts and bond pads, also by active layer. So the employment of highly reflective metal ohmic contacts with a low contact resistance could substantially improve the GaN extraction efficiency of GaN-based LED, especially for vertical structure LED fabricated by laser lift-off process, which have more light output surface and high thermal conductivity than normal structure LED. The high reflectivity of omni-direction reflector is reported, that is, incorporation of Ag and Al onto the contact layers acting as a reflecting layer. Firstly, the reflectivity of the layers Ti/Ag, Al, Ni/Au/Ti/Ag and Ni/Au/Al were calculated through the theory of optical films. Then the reflectivity and contact characteristic of the GaN-based LED samples with these multi-layers on p-type GaN were measured. The result showed high omni-directional reflectors can be achieved over Ag-based films structure, and Al-based also, but the Ag-based films can provide higher reflectivity of 80%, which is better than that of Al-based film. The current-voltage curves showed low resistance on these contact layers except the Al direct on p-GaN. And the resistance of Ni/Au/Ti/Ag and Ni/Au/Al just depends on the annealed Ni/Au layers. Here the Ni/Au layers not only supply the ohmic contact but also the spreading the current. The conglomerate and oxidation of Ag film under high temperature are eliminated by introducing other Ni/Au cladding layers. Because the thickness of Ag is enough for high reflectivity so the additional layers after Ag also have no effect on the reflectivity. The good stability, low resistance and high reflectivity were obtained by two-step annealing methods. Then we applied the multi-layer Ni/Au/Ti/Ag/NiAu to vertical structure light emitting diodes (LED) by laser lift-off technology. The light output efficiency was improved significantly. The vertical structure LED with high reflective contact layer was fabricated successfully.
High-Performance GaN-Based LEDs on Si Substrates: The Utility of Ex Situ Low-Temperature AlN Template With Optimal Thickness

Haiyan Wang,Zhiting Lin,Yunhao Lin,Wenliang Wang,Guoqiang Li

DOI: https://doi.org/10.1109/TED.2017.2753844

IF: 3.1

2017-01-01

IEEE Transactions on Electron Devices

Abstract:Ex situ low-temperature (LT)-AlN templates are employed to realize GaN-based light-emitting diodes (LEDs) on Si substrates by the combination of pulsed laser deposition and metal organic chemical vapor deposition. The influence of ex situ LT-AlN template thickness on the properties and performance of as-grown LEDs has been carefully studied. The LED wafer grown on 70-nm-thick ex situ LT-AlN templa...
Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

Burhan K. SaifAddin,Abdullah Almogbel,Christian J. Zollner,Humberto Foronda,Ahmed Alyamani,Abdulrahman Albadri,Michael Iza,Shuji Nakamura,Steven P. DenBaars,James S. Speck

DOI: https://doi.org/10.48550/arXiv.1812.01125

2018-12-04

Abstract:The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into thin-film flip-chip LEDs (TFFC LEDs) with high LEE. This process transfers the AlGaN LED epi onto a new substrate by wafer-to-wafer bonding, and by removing the absorbing SiC substrate with a highly selective SF6 plasma etch that stops at the AlN buffer layer. We optimized the inductively coupled plasma (ICP) SF6 etch parameters to develop a substrate-removal process with high reliability and precise epitaxial control, without creating micromasking defects or degrading the health of the plasma etching system. The SiC etch rate by SF6 plasma was ~46 \mu m/hr at a high RF bias (400 W), and ~7 \mu m/hr at a low RF bias (49 W) with very high etch selectivity between SiC and AlN. The high SF6 etch selectivity between SiC and AlN was essential for removing the SiC substrate and exposing a pristine, smooth AlN surface. We demonstrated the epi-transfer process by fabricating high light extraction TFFC LEDs from AlGaN LEDs grown on SiC. To further enhance the light extraction, the exposed N-face AlN was anisotropically etched in dilute KOH. The LEE of the AlGaN LED improved by ~3X after KOH roughening at room temperature. This AlGaN TFFC LED process establishes a viable path to high external quantum efficiency (EQE) and power conversion efficiency (PCE) UV-C LEDs.

Applied Physics,Materials Science,Instrumentation and Detectors,Optics
The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

J. Lang,F. J. Xu,J. M. Wang,L. S. Zhang,Z. H. Sun,H. D. Zhang,X. Q. Guo,Z. Y. Zhang,C. Ji,F. Y. Tan,C. Z. Ji,X. N. Kang,X. L. Yang,N. Tang,Z. Z. Chen,X. Q. Wang,W. K. Ge,B. Shen

DOI: https://doi.org/10.1063/5.0216179

IF: 4

2024-07-01

Applied Physics Letters

Abstract:Composited p-type electrodes with high reflectivity have been investigated in AlGaN-based ultraviolet light emitting diodes (UV-LEDs) to improve the light extraction efficiency, which are composed of a patterned ITO layer and an Al reflector. It is verified that the patterned ITO with a thickness of 30 nm can not only well form Ohmic contact with p-GaN capping layer, but also be nearly 90% transparent to ultraviolet light, and thus presenting a reflectivity of 73% at 280 nm when combined with an Al reflector. Further experimental efforts confirm that the performance of the UV-LEDs is dramatically improved with such p-type electrodes. The maximum light output power and wall plug efficiency in the current range of 0–100 mA are severally increased by 49.8% and 54.2% compared to the device with traditional Ni/Au electrodes.

physics, applied
Thermal behavior of AlGaN-based deep-UV LEDs

Su-Hui Lin,Ming-Chun Tseng,Ray-Hua Horng,Shouqiang Lai,Kang-Wei Peng,Meng-Chun Shen,Dong-Sing Wuu,Shui-Yang Lien,Hao-Chung Kuo,Zhong Chen,Tingzhu Wu

DOI: https://doi.org/10.1364/OE.457740

2022-05-09

Abstract:This study utilized thin p-GaN, indium tin oxide (ITO), and a reflective passivation layer (RPL) to improve the performance of deep ultra-violet light-emitting diodes (DUV-LEDs). RPL reflectors, which comprise HfO2/SiO2 stacks of different thickness to maintain high reflectance, were deposited on the DUV-LEDs with 40 nm-thick p-GaN and 12 nm-thick ITO thin films. Although the thin p-GaN and ITO films affect the operation voltage of DUV-LEDs, the highly reflective RPL structure improved the WPE and light extraction efficiency (LEE) of the DUV-LEDs, yielding the best WPE and LEE of 2.59% and 7.57%, respectively. The junction temperature of DUV-LEDs with thick p-GaN increased linearly with the injection current, while that of DUV-LEDs with thin p-GaN, thin ITO, and RPL was lower than that of the Ref-LED under high injection currents (> 500 mA). This influenced the temperature sensitive coefficients (dV/dT, dLOP/dT, and dWLP/dT). The thermal behavior of DUV-LEDs with p-GaN and ITO layers of different thicknesses with/without the RPL was discussed in detail.
Transparent P-Type Layer with Highly Reflective Rh/Al P-Type Electrodes for Improving the Performance of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes

Liubing Wang,Fujun Xu,Jing Lang,Jiaming Wang,Lisheng Zhang,Xuzhou Fang,Ziyao Zhang,Xueqi Guo,Chen Ji,Xiangning Kang,Ning Tang,Xinqiang Wang,Zhixin Qin,Weikun Ge,Bo Shen

DOI: https://doi.org/10.35848/1347-4065/acbf14

IF: 1.5

2023-01-01

Japanese Journal of Applied Physics

Abstract:We attempt to improve the light extraction of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) by introducing a highly transparent p-type layer together with reflective Rh/Al p-type electrodes. The p-GaN contact layer is thinned to balance the Ohmic contact and DUV light transmittance, which helps the Rh/Al p-type electrodes realize high reflection as well as good electrical performance. After optimization, the Rh/Al reflective p-type electrodes present reflectance of greater than 70% and specific contact resistivity of 3.75 x 10(-4) omega center dot cm(2). Due to the improvement in the light extraction efficiency, the highest wall-plug efficiency of 278 nm DUV-LEDs is improved by 57% compared to the conventional configuration with Ni/Au as the p-type electrodes.
Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers

Zhen-Jin Wang,Xin-Liang Ye,Wei-Chen Tu,Chih-Chiang Yang,Yan-Kuin Su

DOI: https://doi.org/10.1109/ted.2024.3351595

IF: 3.1

2024-03-06

IEEE Transactions on Electron Devices

Abstract:This study aims to improve the characteristics of AlGaInP-based micro light-emitting diodes (micro-LEDs) by utilizing three different passivation layers, including silicon dioxide (SiO2), distributed Bragg reflector (DBR), and aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) in combination with DBR. In terms of transmittance and refractive indices, our proposed structure, constructed with ALD-grown Al2O3 and a nine-layered DBR, exhibits significant improvements in all aspects compared to the traditional structure with a 3000Å SiO2 passivation layer. Additionally, the structure demonstrates a 124.28% increase in external quantum efficiency (EQE) compared to the LED constructed with a nine-layered DBR. This result indicates that the ALD growth of Al2O3 effectively reduces sidewall losses, significantly impacting the improvement of micro-LEDs.

engineering, electrical & electronic,physics, applied

High-efficiency AlGaInP LED with low thermal resistance fabricated by electroplating

High-output power GaN-LED based on surface plasmon enhancement

High Thermal Conductive AlN Substrate for Heat Dissipation in High-Power LEDs

High-reflectivity composite metal substrate for high-power IRLED

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

The design and fabrication of nanostructure on p-type GaN surface for GaN-based LEDs with high light extraction efficiency

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Design and Fabrication of High-Index-contrast Self-Assembled Texture for Light Extraction Enhancement in LEDs.

Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device

Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning P-Algan/p-gan Layer with Ni/Au/Al High-Reflectivity Electrodes

Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective N-Type Electrode Made of Cr/Al

Enhanced Optical–Thermal Performances of High-Power LED by Plated Copper on Thick Film Ceramic Substrate

The Improvement of Extractive Emission in InGaAlP Quantum Wells Light Emitting Diodes by Microstructures

Ohmic Contact of High Reflectivity on P-Type GaN

High-Performance GaN-Based LEDs on Si Substrates: The Utility of Ex Situ Low-Temperature AlN Template With Optimal Thickness

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

Thermal behavior of AlGaN-based deep-UV LEDs

Transparent P-Type Layer with Highly Reflective Rh/Al P-Type Electrodes for Improving the Performance of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes

Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers