Abstract:Today's advanced technology allows engineers to fabricate GaN LEDs with various heights, widths, shapes, and materials. Total internal reflection is a key factor in GaN LED design, because all light that is created inside the LED is lost unless it approaches the chip to air interface at an angle less than 23.58 degrees with respect to the normal. The narrow range of angles at which light can successfully escape the chip is a result of the large difference in refractive indices between GaN and air. Adding a layer of ITO to the GaN reduces the difference in refractive indices between steps and increases the critical angle to 28.4 degrees. Transmitting from ITO into epoxy reduces this difference in refractive indices again, bringing the critical angle to 47.9 degrees. Because a higher critical angle should allow more light to escape the LED, we focus on enhancing light extraction efficiency of GaN LED's that utilize an ITO to epoxy interface using FDTD simulations. The simulation results show us that increasing the critical angle to 47.9 degrees improves light extraction by 40%, proving that the critical angle does play a significant role in light extraction. From this initial result, we then compare light extraction efficiencies of ITO and GaN gratings over varied grating periods, and show that adding an Ag reflection layer improves overall efficiency. Finally, we show that the light extraction for LED's utilizing an Ag reflection layer is highly dependent on the sapphire substrate thickness.

Design and Fabrication of High-Index-contrast Self-Assembled Texture for Light Extraction Enhancement in LEDs.

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Design of a High Extraction Efficiency Light-Emitting Diode with Two Crossed Grating Structures

Enhancement of Extraction Efficiency by Metallic Photonic Crystal Embedding in Light-Emitting Diode

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

A Cost Effective Process for Large Area Photonic Array Applied in Light Emitting Diodes for Light Extraction Enhancement

Single-step-fabricated Disordered Metasurfaces for Enhanced Light Extraction from LEDs

Light Extraction Improvement of Gan Leds Using Nano-Scale Top Transmission Gratings

Surface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating.

Simulation of Nanoscale ITO Top Grating of GaN LED

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Experiment and Simulation of a Selective Subwavelength Filter with a Low Index Contrast

Top Transmission Grating Gan Led Simulations for Light Extraction Improvement

Enhancing Light Extraction of Organic Light Emitting Diodes by Deep-Groove High-index Dielectric Nanomesh Using Large-area Nanoimprint

Enhanced Light Extraction Efficiency of an LED Package by a Surface-Mounted Amorphous Photonic Structure

High Light-Extracting Efficiency for Oled Directly Fabricated on Double-Side Nanotextured Silica Substrate

Nano-grooves etching on top of GaN-LED for light extraction enhancement

Role of surface microstructure and shape on light extraction efficiency enhancement of GaN micro-LEDs: A numerical simulation study

Further Enhancement of Light Extraction Efficiency of Light-Emitting Diode with Ag Film Grown on Photonic Crystals

Enhanced Light Extraction Efficiency by Self-Masking Technology with Carbonized Photoresist for Light-Emitting Diodes

Improvement of Light Extraction from Patterned Polymer Encapsulated Gan-Based Flip-Chip Light-Emitting Diodes by Imprinting