Leakage power modeling method for SRAM considering temperature, supply voltage and bias voltage

Feng Zhang,Rong Luo,Yongpan Liu,Hui Wang,Huazhong Yang
DOI: https://doi.org/10.1109/ICSICT.2006.306069
2007-01-01
Abstract:In this paper, an accurate power estimation method for SRAM memories based on structures is proposed. Furthermore, based on this power estimation method, a leakage power model for SRAM considering temperature, supply voltage and bias voltage is also proposed. Its maximum error is within 7%. © 2006 IEEE.
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