Abstract:SRAM plays an important role in achieving high computational speed in digital systems. Its fast access times, low latency, random access, and high reliability make it an essential component in modern digital systems. Due to its higher speed, it is commonly used in cash memory and realtime processing. However, as the size of the cache memory increases, the on-chip area requirement also increases. This can become a significant design challenge, especially for highperformance microprocessors and ASICs that require large amounts of cache memory. Thus, to address this challenge, designers need to optimize the size of the SRAM arrays used for cache memory while maintaining performance and stability. To meet all these requirements, designers have been focusing on the sub-micron level. So, this paper is dedicated to investigating the performance and stability of 6T SRAM cells in the deep sub-micron regime. It has been observed that the SRAM cell designed for the 22nm technology node has 92.0% less power dissipation, consumes 87.7% less area, and has 88.0% less delay in comparison to the 180nm node. Whereas the static noise margin (SNM) becomes worse at lower technology nodes. In addition, the stability of the SRAM cell has also been analyzed in terms of process corner analysis. The corner analysis reveals that the SF and FF are the best corners for optimum performance of the SRAM cell. We also realized the SRAM 64X64 (4Kb) memory array on 180nm and 45nm technology nodes. The memory arrays realized on 180nm consume 37.23 mW of power during read and write operations. Whereas the array designed on a 45nm technology node consumes 8.85 mW of power in read and write cycles, respectively.

Power Comple Ity Analysis of Adiabatic SRAM

Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Analyzing the Performance of 6T SRAM Cell and 64×64 Memory Array at Lower Technology Nodes for Low Power Design

Highly accurate power modeling method for SRAM structures with simple circuit simulation

CDS-RSRAM: a Reconfigurable SRAM Architecture to Reduce Read Power with Column Data Segmentation

A comprehensive speed-power analysis of resistive switching memory arrays with selection devices

A low-Power SRAM with charge cycling based read and write assist scheme

Architectural Power Models for Sram and Cam Structures Based on Hybrid Analytical/empirical Techniques

Leakage Power Analysis and Estimation in SRAMs

Architecture-level energy model for high-capacity STT-MRAM memory

Signal Integrity Analysis for Resistive Random Access Memory Crossbar Array by Compact Model with Consideration of Electro-Thermal Coupling Effects

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Resonant Energy Recycling SRAM Architecture

An Improved Data-aware Structure Sub-threshold SRAM

An Efficient Method for Evaluating RRAM Crossbar Array Performance

Performance Analysis of 6T and 9T SRAM

Leakage power modeling method for SRAM considering temperature, supply voltage and bias voltage

A Novel Power Estimation Framework for SRAM-based FPGAs

SRAM Standby Leakage Decoupling Analysis for Different Leakage Reduction Techniques

Measurement of SRAM Standby Leakage under Advanced Logic Process