Barriers of Au/CdZnTe with Synchrotron Radiation

Zha Gangqiang,Tan Tingting,Zhang Wenhua,Jie Wanqi
DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.z1.141
2007-01-01
Chinese Journal of Semiconductors
Abstract:Au Schottky contact was deposited oil clean CZT(110) and (111)A surfaces by molecular beam epitaxy.Synchro· tron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe.The real Schottky barrier heights were measured to be 0.738 and 0.566eV,respectively.Using metal-induced gap states (MIGS) model,the results of experiment were explained.
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