Oxidation and Oxygen Thermal Desorption Mechanism on Narrow-Gap Iv-Vi Semiconductor Pbte(111) Surface
Wu Hai-Fei,Wu Ke,Zhang Han-Jie,Liao Qing,He Pi-Mo
DOI: https://doi.org/10.3866/pku.whxb201202131
2012-01-01
Acta Physico-Chimica Sinica
Abstract:Oxidation and thermal desorption mechanism on the PbTe(111) surface were investigated using X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and low-energy-electron diffraction (LEED). The initial cleaning of the surface by 500 V Ai(+) sputtering followed by annealing at 250 degrees C yielded a perfect (1 x 1) PbTe(111) surface. XPS measurements showed that PbO2, PbO, and TeO2 were present at the PbTe(111) surface after air exposure for 2 days, and the intensity ratio of Te 3d(5/2) and Pb 4f(7/2) increased rapidly compared to that of the clean PbTe(111) surface, indicating Te depletion and Pb enrichment of the surface. XPS and STM measurements showed that the thickness of the oxide layer was more than 2 monolayers (MLs). During thermal treatment, the core levels of PbO2 and TeO2 disappeared and the intensity of the O 1s core level decreased, indicating surface decomposition of PbO2 and TeO2, and desorption of oxygen, whereas PbO was still present on the surface after annealing at up to 350 degrees C.