Abstract:We investigate the stability of the effective lifetime τeff and the recombination current density parameter J0 in n-type silicon samples with symmetric phosphorus doped poly-Si/SiOx structures, and identify factors that contribute to the passivation degradation behavior. It is found that the surface passivation quality of phosphorus doped polysilicon passivating contacts degrades upon dark annealing and light soaking at temperatures between 75 °C and 200 °C, which can lead to a pronounced increase of the recombination current density parameter J0 (one-side) from below 10 fA/cm2 to 50 fA/cm2 or above. The degradation is only detected on fired wafers, whereas the surface passivation quality is found to be stable in the non-fired sister samples. Surprisingly, a recovery of τeff and J0 is observed after the degradation. The degradation and regeneration behaviors depend strongly on temperature and light intensity, and the presence of silicon nitride (SiNx) capping layers during the light soaking. Increasing the annealing temperature dramatically increases the rate of the degradation and the regeneration process, and at the same time reduces the magnitude of the degradation. The regeneration process appears to be affected by the presence of SiNx films during the light soaking treatment. Samples with SiNx films removed after firing suffer a significantly larger degradation upon light soaking without any lifetime regeneration. Grazing incidence X-ray diffraction measurements reveal negligible change in the structural property and crystalline quality of the polysilicon layer during the degradation.

Stability of Mixed Phase Silicon Thin Film Material under Light Soaking

Relation of light stability and microstructure of microcrystalline silicon thin film

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

A Fast Method to Diagnose Phase Transition from Amorphous to Microcrystalline Silicon

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Light Soaking of Hydrogenated Amorphous Silicon: a Short Review

Recent Progresses on the Stability of Hydrogenated Amorphous Silicon Thin Films

Degradation Study of Thin-Film Silicon Structures in a Cell Culture Medium.

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

Tuning Oxygen Impurities and Microstructure of Nanocrystalline Silicon Photovoltaic Materials Through Hydrogen Dilution

Fabrication of Microcrystalline Silicon Thin Film and the Study of Its Microstructure and Stability

Vapor-Phase Silanization of Oxidized Porous Silicon for Stabilizing Composition and Photoluminescence

Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas

Effect of Silane/hydrogen Ratio on Microcrystalline Silicon Thin Films by Remote Inductively Coupled Plasma

Long-term stability study of the passivation quality of polysilicon-based passivation layers for silicon solar cells

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells

Study of microstructure and defects in hydrogenated microcrystalline silicon films