Abstract:An integrated approach combining scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) is used to investigate the atomic structures and electronic properties of Cr-doped ZnO() surfaces. When deposited at 300 K, Cr at low surface coverage (< 0.1 ML) appeared either as isolated atoms on the surface terrace of ZnO() or substituting Zn atoms in the ZnO lattice. Their structural models could be identified from atomic-resolution STM images and their oxidation states were found as Cr3+ based on XPS measurements. Rectangular islands nucleated at step edges along the [0001] direction could also be observed during the initial growth of Cr at 300 K and were assigned as Cr islands. The density of Cr islands as well as their average size increased with the increasing of Cr surface loading. Thermal treatments at above 600 K could facilitate the decomposition of Cr islands and the re-dispersion of Cr atoms into the ZnO lattice, indicating a strong interaction between Cr and ZnO. The adsorption of CO at 78 K showed no preferential adsorption at Cr3+ sites embedded in the surface lattice of ZnO. However, the re-dispersion of Cr atoms into the ZnO bulk at above 600 K could induce a significant upward band bending, causing a negative shift of core level XPS peaks of Zn 2p and O 1s by ~0.5–0.7 eV. Our study has thus constructed a model catalyst for Cr-doped ZnO and provided atomic insight for understanding ZnO-based catalysts.Cr islands and isolated Cr3+ atoms deposited on ZnO() at 300 K would re-disperse into ZnO lattice after annealing at above 600 K owing to the strong interaction between Cr and ZnO.

Study on Adsorption and Thermal Oxidation of Zn on SiC Surface by SR Photoemission

Study on Formation of ZnO/SiC Interface by SRPES

Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0001) surface with synchrotron radiation

Photoemission Study of the Initial Oxidation Of

Initial Study on the Structure and Optical Properties of ZnO Film on Si(111) Substrate with a SiC Buffer Layer

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Growth Behavior of Zno Nanoparticles Formed on Zn Implanted Si(001) Combined with Thermal Oxidation

Synchrotron Radiation Assistant MOCVD Deposition of ZnO Films on Si Substrate

The Structure and Photoluminescence Properties of ZnO/SiC Multilayer Film on Si Substrate

Study on the oxidation reaction on the interface of PZT/Si film

Effects of Different Substrate Surface Modifications on the Epitaxial ZnO/Si

The Structure and Optical Properties of SiC Film on Si (111) Substrate with a ZnO Buffer Layer by RF-magnetron Sputtering Technique

First-principles study of Si atoms adsorbed on ZnO (0001) surface and the effect on electronic and optical properties

Carbonization Process And Sic Formation At C-60/Si(111) Interface Studied By Srpes

Atomic structures and electronic properties of Cr-doped ZnO( ) surfaces

Photoemission studies of Mn/ZnO(000-1) interface

Studies of Mn/ZnO (0001̄) Interfacial Formation and Electronic Properties with Synchrotron Radiation

Dynamics of Sn and Zn Atoms on a Si(1 1 1)-7 × 7 Surface

Structure and Optical Properties of the SiC/ZnO Five-Layer Multi-Layer on Si (111) Substrate with a SiC Buffer Layer

Xps and Srups Study of Oxygen Adsorption on Cd0.9zn0.1te (111)A Surface

Epitaxial growth of ZnO on (1 1 1) Si free of an amorphous interlayer