Abstract:In recent years,zinc oxide (ZnO) has received much attention due to its potential applications in blue and ultraviolet devices.High quality and high efficiency p-type doping is still a big challenge for their studies and device applications.Zincblende ZnO is suggested to be one possible key to overcome this obstacle.Metastable thin zincblende ZnO film has been realized on GaAs(001),sapphire,and Pt(111)/Ti/SiO2/Si(100) multilayered substrates using a ZnS buffer/interlayers for the growth.However,due to the very large lattice mismatching,silicon is not the idealist substrate for the epitaxial growth of single crystal ZnO,while a great variety of wurtzite ZnO nano-structures have been constructed on Si(001).In this work,a plasma assistant molecular beam epitaxy was employed to grow the zincblende ZnO directly on Si(001) substrate at room temperature,and the growth kinetics was simply explored.The samples were grown and post-annealed under modulated growth conditions.They were zincblende polycrystalline embedded with wurtzite subdomains revealed by in-situ scanning tunneling microscopy and X-ray diffraction measurements.Nano trapezoid columns were observed on the as-grown samples.Nanostructural rings and clusters were depicted during the surface evolution after annealing.Though the zincblende ZnO is quite stable in ambient conditions,the metastable phase can be realized only under some critical conditions,such as the initial stage of ZnO nucleation during the epitaxial growth.The wurtzite ZnO generally has a growth privilege over the zincblende ZnO.Since the silicon substrate has a cubic symmetry lattice,it could result in formation of the zincblende ZnO in square structure at the initial growth,especially under the very low epitaxial temperature,i.e.room temperature.With the increasing of the thin film thickness,the influence from the substrates decreases,then the growth turns to favor for more stable wurtzite structure.Thus,the samples became zincblende polycrystalline embedded with wurtzite subdomains.Though the surface experiences a series of evolutions under annealing,the investigations showed the phase transition from zincblende to wurtzite is not as remarkable as expected.

Epitaxial growth of ZnO on (1 1 1) Si free of an amorphous interlayer

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Epitaxial ZnO Films on (111) Si Substrates with Sc2O3 Buffer Layers

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Layer-By-Layer Growth of High-Optical-Quality Zno Epitaxy Film on Si(111) Substrate Using A Mgo/Tin Buffer Layer by Pulsed-Laser Deposition

Effects of Different Substrate Surface Modifications on the Epitaxial ZnO/Si

Epitaxial growth of ZnO thin films on Si substrates by PLD technique

Epitaxial Zn1−Mg O Films Grown on (1 1 1) Si by Pulsed Laser Deposition

Growth and Investigation of Zincblende ZnO on Si(001)

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

Heteroepitaxial Growth and Luminescence Properties of Non-Polar (1 1 0) Orientation ZnO Films on Si(0 0 1) Substrates by Pulsed Laser Deposition

Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Structure and Electrical Characteristics of Zinc Oxide Thin Films Grown on Si (111) by Metal-organic Chemical Vapor Deposition

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition

Heteroepitaxial Growth and Luminescence Properties of Non-Polar (110) Orientation Zno Films on Si(001) Substrates by Pulsed Laser Deposition

Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

Cubic Mgxzn1-Xo Films Grown on Si(111)

Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition

Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition