Abstract:Al2O3/ZnO nanolaminates are promising nanocomposites with special properties for the applications of oxide -based thin-film transistors, photoluminescence devices, and pitch grating references. In this study, Al2O3/ZnO nanolaminates were grown at 80 degrees C, 120 degrees C, 250 degrees C by atomic layer deposition, and then post-annealed by furnace annealing at 600 degrees C, 700 degrees C, 800 degrees C respectively. Both the in-situ growth temperature and post-annealing temperature-induced microstructures of Al2O3/ZnO nanolaminates were examined using x-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). In addition, the interfacial diffusion and solid-state reaction were systematically studied by high-resolution transmission electron microscopy (HRTEM). The films grown at 80 degrees C and 250 degrees C show a typical polycrystalline structure, while the film grown at 120 degrees C possesses an obvious preferred orientation. After post-annealing at 700 degrees C, the spinel ZnAl2O4 grains are formed at the interface of the Al2O3/ZnO films grown at 80 degrees C and 250 degrees C, which indicates the solid-state re-action has occurred, but this phenomenon did not occur for the films grown at 120 degrees C. The results indicate that the growth temperature not only affects the crystallinity and preferred orientation of the ZnO interlayers, but also the interfacial diffusion and counter-diffusion of atoms, and thereby the solid-state reaction, in the post -annealing process. So, simultaneously controlling the effects of the growth and post-annealing temperatures has great significance for this kind of nanolaminates.

Growth Behavior of Zno Nanoparticles Formed on Zn Implanted Si(001) Combined with Thermal Oxidation

Annealing Behavior of ZnO Films Grown on Si Substrate by Reactive Radio-Frequency Magnetron Sputtering

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Anodic-Aluminium-Oxide Template-Assisted Growth Of Zno Nanodots On Si (100) At Low Temperature

Annealing effect for surface morphology and luminescence of ZnO film on silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Optical studies of ZnO quantum dots grown on Si(001)

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Scaling Behavior and Coarsening Transition of Annealed ZnO Films on Si Substrate

Zno Films Grown on Si Substrates with Au Nanocrystallites As Nuclei

Effect Of Annealing On Zno Thin Films Grown On (001) Silicon Substrate By Low-Pressure Metalorganic Chemical Vapour Deposition

The Thermal Physical Formation of ZnO Nanoparticles and Their Morphology

Eutectic Condensation and Nucleation in Vapor-Liquid-Solid Grown Zno Nanorod Arrays on Si Substrate

Study on Adsorption and Thermal Oxidation of Zn on SiC Surface by SR Photoemission

Zno Nanobelts Grown on Si Substrate

Interfacial and Microstructural Changes of the Al2O3/ZnO Multilayer Films Induced by In-Situ Growth and Post-Annealing Temperatures

Effects of High-Dose Ge Ion Implantation and Postimplantation Annealing on Zno Thin Films

Structure Evolution of Zn Cluster on Si (0 0 1) Substrate for ZnO Nanostructure Growth

Effects Of Annealing On Optical Properties Of Zn-Implanted Zno Thin Films

Controlled Growth of ZnO Films on Si Substrate and N-doping Behavior