Abstract:Deep reactive ion etching (DRIE) process is a key growth for fabrication of micro-electromechanical system (MEMS) devices. Due to complexity of this process, including interaction of the process steps, full analytical modeling is complex. Plasma process holds deficiency of understanding because it is very easy to measure the results empirically. However, as device parameters shrink, this issue is more critical. In this paper, our process was modeled qualitatively based on High Density Plasma Etch Model. Deep trench solutions of etch rate based on continuity equation were successfully generated first time through mathematical analysis. It was also proved that the product of fluorine and gas phase concentration in SF6 remains identical during both deposition and etching stages. The etching process was treated as a combination of isotropic, directional and angle-dependent component parts. It exploited a synergistic balance of chemical as well as physical etching for promoting silicon trenches and high aspect ratio structures. Simulations were performed for comprehensive analysis of fluxes coming towards the surface during chemical reaction of gas. It is observed that near the surface, the distribution of the arrival flux follows a cosine distribution. Our model is feasible to analyze various parameters like gas delivery, reactor volume and temperature that help to assert large scale effects and to optimize equipment design.

A Model of Deep-RIE in MEMS Fabrications

Modeling and Simulation of RIE in MEMS Fabrication

Modelling and Simulations of DRIE Including a Footing Effect

Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method

A Novel Model for Surface Evolvement and Footing Effect Simulations in DRIE Fabrications

Modeling and Simulation of Silicon Dry Etching

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Characterizing and Predicting Spatial Nonuniformity in the Deep Reactive Ion Etching of Silicon

An Improved 3d Simulator For Mems Processes

Modeling and simulation of the lag effect in a deep reactive ion etching process

Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

Characterization and Modeling of Wafer and Die Level Uniformity in Deep Reactive Ion Etching (DRIE)

Deep Reactive Ion Etching of Silicon Using Non-Icp-based Equipment

Improvement on the Uniformity of Deep Reactive Ion Etch for Electrically Isolated Silicon-Based Substrates

PATTERN DENSITY BASED PREDICTION FOR DEEP REACTIVE ION ETCH (DRIE)

Three-dimensional cellular model for profile simulation of ion etching process

3D Simulation of Profile Evolution in Silicon DRIE

A Three-Step Model of Black Silicon Formation in Deep Reactive Ion Etching Process

Simulation of MEMS Microfabrication Process Based on Narrow Band Level Set and Ray Tracing Methods

Simulations For Surface Evolvement And Footing Effect In Icp Drie Fabrications