Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Temperature Field Optimization and Polytype Control in the Growth of 6H-Sic Single Crystal

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

Endomyocardial biopsy diagnosis of acute rejection in cardiac allografts.

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Hot-zone design and optimization of resistive heater for SiC single crystal growth

Controlled Growth of One-dimensional 3C–SiC nanostructures with stable morphology

Pvt Growth of 6h Sic Crystals and Defect Characterization

Optimum Design and Simulation Analysis of Temperature Field on Sapphire Crystal Growth with GOI Method

Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization