Investigation of domain and pyroelectric properties of lanthanum-doped lead titanate ferroelectric thin films

Hong Liu,Zhaohui Pu,Xiaogang Gong,Dingquan Xiao,Jianguo Zhu
DOI: https://doi.org/10.3321/j.issn:1002-0470.2006.11.010
2006-01-01
Abstract:Lanthanum-doped lead titanate [(Pb0.9La0.1)Ti0.975O3, PLT10] ferroelectric thin films were grown on Pt/Ti/Si02/ Si(100) substrates by using RF magnetron sputtering. The crystalline properties of PLT10 thin films were studied by X-ray diffraction (XRD). The surface topography and domain structure which were produced by spontaneous polarization of the corresponding surface region in PLT10 ferroelectric thin films were observed using atomic force microscopy (AFM) and piezoresponse force microscopy (PFM), respectively. The relationship between fabricating conditions and the properties of PLT10 thin films was studied. It was found that PLT10 thin films fabricated under the optimized conditions possessed a low dielectric constant (εr = 365), a low dielectric loss (tgδ = 0.02), and a large pyroelectric coefficient (γ = 2.20 × 10-8 C · (cm2 · K)-1), respectively. The PLT thin films could meet the needs for uncooled pyroelectric infrared sensors.
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