The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering

Liu Hong,Pu Zhaohui,Wang Zhihong,Huang Huidong,Li Yanrong,Xiao Dingquan,Zhu Jianguo

DOI: https://doi.org/10.1557/proc-0902-t03-35

2005-01-01

Abstract:Lanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90°domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10−8C•(cm2•K)−1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.