The Study of Ferroelectric La-Doped PbTiO3Thin Films Prepared by RF Magnetron Sputtering

CT Yang,SR Zhang,JS Liu,MQ Wu
DOI: https://doi.org/10.1080/10584580390254970
2003-01-01
Integrated Ferroelectrics
Abstract:Ferroelectric La-modified lead titanate (PLT) thin film were grown on Pt/Ti/SiO2/Si by sputtering the Pb0.93La0.07TiO3 targets containing an amounts of excess 8% PbO. The effects of sputtering and annealing conditions on the crystalline structures and the surface morphologies of the PLT thin films have been investigated. The remanent polarization (Pr) and the coercive field of the PLT film through rapid thermal annealing (RTA) was 10.2 μC/cm2 and 45 kV/cm respectively. The maximum pyroelectric coefficient reached 19 nC/cm2.K at 20°C.
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