Dielectric Properties Of Pb0.97la0.02(Zr0.87-Xsnxti0.13)O-3 Thin Films With Compositions Near The Morphotropic Phase Boundary
Xihong Hao,Jiwei Zhai,Xi Yao
DOI: https://doi.org/10.1111/j.1551-2916.2008.02873.x
IF: 4.186
2009-01-01
Journal of the American Ceramic Society
Abstract:Pb0.97La0.02(Zr0.87-xSnxTi0.13)O-3 (PLZST, x=0.27, 0.17, 0.07)) thin films with the compositions in ferroelectric rhombohedral (FER) region, near the morphotropic phase boundary (MPB), were deposited on the Pt-electroded silicon (PtSi) substrates by the sol-gel process. The phase structure and surface morphology of PLZST thin films were analyzed by XRD and SEM, respectively. The dc electric field and temperature-dependent dielectric properties of the PLZST thin films were investigated in detail. The results indicated that the dielectric constant, remnant polarization, and the Curie temperature (T-c) of PLZST films were elevated with the decrease of Sn content. Hence, the larger dielectric tunability (tau) was obtained for PLZST thin films with x=0.07, and the maximum tau value was 78.1%.