Abstract:In this paper, a novel 4H-SiC double reduced surface field (RESURF) LDMOS with a one-step doped Ptop layer and a Pburried layer (SDP LDMOS) has been proposed to optimize the electric field distribution and enhance the breakdown voltage. By using the step doping (SD) technology, the Ptop layer and the Pburried layer introduced extra electric field peaks in the drift region, hence the lateral and the vertical electric field distributions have been optimized simultaneously and the breakdown voltage has been improved significantly. In addition, the Pburried layer facilitated the depletion of the drift region. Therefore, for similar breakdown voltage rating, higher doping concentration of the drift region and smaller specific on-resistance have been achieved. It was found by the finite element numeric simulation that the proposed device exhibited a high breakdown voltage (BV) of 1934 V and a low specific on-resistance (Ron,sp) of 4.04 mΩ·cm 2 (at V GS = 10 V, V DS = 1 V), resulting in a 49% higher Baliga's figure of merit (FOM, defined as BV 2 /Ron,sp) 925.8 MW/cm 2 than that of the conventional double RESURF LDMOS.

A Breakdown Model of Thin Epitaxial RESURF Device with Step Doping Profile Drift

An Analytical Model for the 3D-RESURF Effect

Analytical Model for the Surface Electrical Field Distributions of Double RESURF Devices with Gaussian-doped P-top Region

Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor

A Novel RESURF LDMOS with Embedded CB-layer

Linearly Graded Doping Drift Region: a Novel Lateral Voltage-Sustaining Layer Used for Improvement of RESURF LDMOS Transistor Performances

Off-state Avalanche Breakdown Induced Degradation in 20 V NLDMOS Devices

A New Analytical Model For The Surface Field Distribution And Optimization Of Thin Film Soi Resurf Devices

A Novel Analytical Model for Surface Electrical Field Distribution and Optimization of TFSOI RESURF Devices

Analytical Model For The Ideal Breakdown Voltage And Optimum Doping Profile Of Soi Resurf Ldmos

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer

Numerical Modeling of Linear Doping Profiles for High-Voltage Thin-Film Soi Devices

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

An Analytical Model of the Surface Electrical Field Distributions of RFP LDMOS and Its Optimum Design

Quasi-2-D analytical model for the surface field distribution and optimization of RESURF LDMOS transistor

A Study of the Resurf Principle for Thin Epitaxial Layer High Voltage Integrated Circuits

An Analytical Model For The Drain-Source Breakdown Voltage Of Rf Ldmos Power Transistors With A Faraday Shield

Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off Between the Breakdown Voltage and On-Resistance

Equivalent Doping Transformation Method for Predicting Breakdown Voltage and Peak Field at Breakdown of Epitaxial-Diffused Punch-Through Junction

A Novel SiC LDMOS with Electric Field Optimization by Step Doping Technology