Abstract:An analytical model for a novel triple reduced surface field（RESURF） silicon-on-insulator（SOI） lateral doublediffused metal–oxide–semiconductor（LDMOS） field effect transistor with n-type top（N-top） layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional（2D） Poisson’s equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage（BV） is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer(Q ntop ) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results,showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.

Analytical Model for the Surface Electrical Field Distributions of Double RESURF Devices with Gaussian-doped P-top Region

An Analytical Model for the Surface Electrical Field Distribution and Optimization of Bulk-Silicon Double RESURF Devices

A New 2-D Analytical Model of Double Resurf in Soi High Voltage Devices

An Analytical Model for the 3D-RESURF Effect

A 2D Analytical Model of SOI Double RESURF Effect

Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor

Analytical Model for Surface Electrical Field Distributions of LDD Power Devices

Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer

An analytical model for SOI triple RESURF devices

Quasi-2-D analytical model for the surface field distribution and optimization of RESURF LDMOS transistor

An Analytical Model of the Surface Electrical Field Distributions of RFP LDMOS and Its Optimum Design

Modeling of a Triple Reduced Surface Field Silicon-on-insulator Lateral Double-Diffused Metal–oxide–semiconductor Field-Effect Transistor with Low On-State Resistance

A Breakdown Model of Thin Epitaxial RESURF Device with Step Doping Profile Drift

A Novel Analytical Model for Surface Electrical Field Distribution and Optimization of TFSOI RESURF Devices

A New Analytical Model For The Surface Field Distribution And Optimization Of Thin Film Soi Resurf Devices

Analytical Models for the Electric Field Distributions and Breakdown Voltage of Triple RESURF SOI LDMOS

A Full Breakdown Model of Thin Epitaxial RESURF LDMOS

Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile

An analytical model for high voltage thin-film Silicon On Insulator RESURF devices

Analytical Model and Optimization of Bulk-Silicon Surface Implanted LDMOS with p Buried Layer

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.