Abstract:An analytical model for a novel triple reduced surface field（RESURF） silicon-on-insulator（SOI） lateral doublediffused metal–oxide–semiconductor（LDMOS） field effect transistor with n-type top（N-top） layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional（2D） Poisson’s equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage（BV） is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer(Q ntop ) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results,showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.

Quasi-2-D analytical model for the surface field distribution and optimization of RESURF LDMOS transistor

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A Concise Analytical Model For The Surface Field Distribution Of Tfsoi Resurf Devices Including Interface Charge Effect

Analytical Model For The Ideal Breakdown Voltage And Optimum Doping Profile Of Soi Resurf Ldmos

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Modeling of a Triple Reduced Surface Field Silicon-on-insulator Lateral Double-Diffused Metal–oxide–semiconductor Field-Effect Transistor with Low On-State Resistance

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