Abstract:In replacing the conventional SiO2 gate dielectric with high-κ materials, new challenges emerge on understanding the kinetics of dielectric breakdown due to the different properties of the new bulk oxide and the interfacial layers at the substrate and gate electrode interface as well. Among several complexities, dielectric relaxation and recovery have received a lot of attention due to their promising applications in resistive random access memory (RRAM). In this study, we explore the stochastic nature of hard breakdown recovery in HfO2, taking advantage of ramped voltage stress (RVS) measurements, which are theoretically equivalent to the widely used constant voltage stress (CVS), while being significantly less time-consuming. We found that the possibility of recovery is largely dependent on the ramp rate during RVS as the dielectric needs adequate time and sufficient thermal budget to recover. The clustering model is found to be a good fit to the RVS data sets for post-recovery subsequent breakdown events and the extent of defect clustering is found to be more intense after increasing number of recovery events. The breakdown mechanism in the stack is confirmed by measuring the resistance change trends with temperature.

A Study of the Resurf Principle for Thin Epitaxial Layer High Voltage Integrated Circuits

A Novel RESURF LDMOS with Embedded CB-layer

An Analytical Model for the 3D-RESURF Effect

A New Double Epitaxial Layer Dielectric Isolation Technology For Hvics

Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV

Linearly Varying Surface-Implanted N− Layer Used for Improving Trade-off Between Breakdown Voltage and On-Resistance of RESURF LDMOS Transistor

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Simulation of reverse breakdown in planar P-N junctions

3d-Resurf Soi Ldmosfet For Rf Power Amplifiers

The Mechanism of Field-Plate Induced the Breakdown Voltage Change of High Voltage LDMOS

Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs

Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor

RESURF Ga$_{2}$O$_{3}$-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

A New Analytical Model For The Surface Field Distribution And Optimization Of Thin Film Soi Resurf Devices

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

RESURF Ga_2O_3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

A Novel Analytical Model for Surface Electrical Field Distribution and Optimization of TFSOI RESURF Devices

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

Analytical Model for the Surface Electrical Field Distributions of Double RESURF Devices with Gaussian-doped P-top Region

Lateral Unbalanced Super Junction (Usj)/3d-Resurf for High Breakdown Voltage on Soi