Fabrication of Ge-dots/Si multilayered structures by combination of low-pressure CVD and Ni-induced lateral crystallization

yi shi,bin yan,l pu,k j zhang,j m zhu,g b ma,ping han,rongting zhang,y d zheng

2006-01-01

Abstract:null

What problem does this paper attempt to address?

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

bo yan,yi shi,lin pu,jianmin zhu,kuangji zhang,guobin ma,ping han,rong zhang,youdou zheng

DOI: https://doi.org/10.1063/1.2218300

IF: 4

2006-01-01

Applied Physics Letters

Abstract:We demonstrate a method for fabricating high-quality Ge-dot/Si multilayered structures. High-density self-assembled Ge dots are grown on amorphous Si layer periodically by low-pressure chemical vapor deposition, and then the amorphous Si are crystallized through Ni-based metal-induced lateral crystallization. Optical microscopy, micro-Raman spectroscopy, and electron microscopy observations reveal that the crystallized Si film has large leaflike grains elongated along the lateral crystallization direction, which shows (110) preference. Furthermore, this preference is found to deliver to different Si layers. The strain shift of Ge dots deduced from Raman spectroscopy reveals a formation of a high-quality interface between the crystallized Si and Ge dot. (c) 2006 American Institute of Physics.
Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Y Shi,B Yan,L Pu,KJ Zhang,P Han,R Zhang,YD Zheng

DOI: https://doi.org/10.1002/pssa.200564503

2006-01-01

Journal of Semiconductors

Abstract:The microstructures of the Ge-dots/Si multilayered structure films fabricated by metal-induced lateral crystallization (MILC) have been investigated. The micro-Raman spectroscopy, optical microscopy and electron microscopy observations reveal that the crystallized Si film has large leaf-like grains elongated along the lateral crystallization direction, which shows (110) preference. Furthermore, this preference is found to deliver to different Si layers of the multilayered structures to have an identical crystalline orientation. The strain shift of Ge dots as deduced from Raman spectroscopy reveals a formation of a high-quality interface between the crystallized Si and Ge-dot
Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Bo Yan,Yi Shi,Lin Pu,Kuangji Zhang,Pin Han,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1016/j.matlet.2006.12.086

IF: 3

2007-01-01

Materials Letters

Abstract:In this work, we propose a novel method for obtaining high-density Ge-dots/Si multilayered heterostructures. The high-density self-assembled Ge dots are firstly grown on a-Si layer using low-pressure chemical vapor deposition (LPCVD), and then low-temperature recrystallized by Ni based metal induced lateral crystallization (MILC). According to optical micrograph, microprobe Raman spectroscopy and transmission electron microscopy (TEM) observations, it has been found that the Ni induced lateral crystallized Si film has large leaf-like grains elongated along the MILC direction with (110) preference. The strain shift of Ge dots reveals the formation of high quality interface between the crystallized Si and Ge dot.
Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Zhang Lei,Ye Hui,Huangfu Yourui,Zhan Wenbo,Liu Xu

DOI: https://doi.org/10.3969/j.issn.1672-7126.2011.06.21

2011-01-01

Abstract:The high density germanium quantum dots(QDs) were deposited by vacuum evaporation in a molecular beam epitaxy(MBE) reactor,on the Si substrates covered with ultra thin SiO2buffer layers.The impacts of the growth conditions on microstructures and properties of the Ge QDs were studied with scanning electron microscopy,energy dispersive spectroscopy,reflection high energy electron diffraction,and Raman spectroscopy.The results show that the Ge quantum-dots with a density of 1011 cm-2 were fabricated,and that the annealing relaxed the residue strains in the quantum-dots.The growth mechanisms and advantages over Stranski Krastanow(S-K) technique were also tentatively discussed.
Fabrication and Characterization of Ge Nanodot/si Nanowire Composite Structures

YE Min-hua,WANG Ding-di,XU Zi-jing,PU Lin,SHI Yi,HAN Min,ZHANG Rong,ZHENG You-dou

2010-01-01

Abstract:Ge nanodot/Si nanowire composite structures were fabricated by combining metal-particle-assisted chemical etching and low pressure chemical vapor deposition,and the microstructures were characterized by SEM,TEM and an united test system of AFM and micro-Raman.SEM and TEM results observed that Ge nanodots uniformly distributed over the whole surface of the Si nanowire.The size and density of Ge nanodots could be controlled by the growth parameters.Micro-Raman demonstrated that the feature peaks of Si and Ge for the individual mesostructure wire,which is extremely shallow and thin,had a large redshift due to the strain and temperature effects.
Fabrication of Gan Nanodots Via Gan Thermal Decomposition in H-2 Atmosphere

Xiong Hui,Jin Zhang,Senlin Li,Hu Wang,Yanyan Fang,Jiangnan Dai,Changqing Chen

DOI: https://doi.org/10.1116/1.4819128

2013-01-01

Abstract:GaN nanodots were fabricated by thermal decomposition of GaN in H2 atmosphere at high temperatures. By varying annealing time and temperature, it was found that dot size and density were highly dependent on annealing conditions. Surface morphology of the sample indicates that the dot formation mechanism is chemical erosion under H2 flow. The etching proceeds in lateral directions, and the dots are formed in hexagonal pit areas. The fitted activation energy of GaN decomposition agrees well with the chemical properties of GaN in the experimental conditions.
Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

J Li,L Wang,XF Huang,M Jiang,W Li,ZY Wang,J Xu,ZG Liu,KJ Chen

DOI: https://doi.org/10.1088/1009-1963/9/7/013

2000-01-01

Chinese Physics

Abstract:A new method of phase-modulated excimer laser crystallization is adopted to fabricate the patterned nanometer-sized crystalline silicon (nc-Si) dots within the sandwiched structure (a-SiNx:H/a-Si:H/a-SiNx:H) films. The results of transmission electron microscopy, electron diffraction and Raman scattering show the ultra-thin and single-layer nc-Si films were patterned in the lateral direction and the size of crystallites is controlled by the thickness of as-deposited a-Si film in the longitudinal direction. The effects of the laser energy density on the structures of the samples and the crystallization mechanism are discussed.
High-density Ge Dots Grown on Si Substrate by Modified S-K Method

B Yan,Y Shi,L Pu,JM Zhu,P Han,SL Gu,B Shen,YD Zheng

DOI: https://doi.org/10.1109/icsict.2004.1436652

2004-01-01

Abstract:In this work, we have performed epitaxy of Ge dots over Si nanometer-scale columns on Si (100) substrate. A two-step fabrication process has been developed. First, Si buffer layer is deposited on Si substrate by LPCVD and then Ge dots grow on the Si layer. The Ge dots on Si with the packing density as high as 1.6x 10/sup 12/cm/sup -2/ and the average size is 8nm. SEM, XRD, and HRTEM measurements indicate that Ge dots were formed on each nanometer Si column separately. This growth obeys the Stranski-Krastanov (S-K) mode in local area.
The Fabrication of GaN Quantum Dots Using Metalorganic Chemical Vapor Deposition

Peng Chen,Bo Shen,Mu Wang,Yugang Zhou,Zhizhong Chen,Lan Zang,Xiaoyong Liu,Zhenchun Huang,Youdou Zheng,Naiben Min,Yin Hang

DOI: https://doi.org/10.3321/j.issn:1002-0470.1998.06.002

1998-01-01

Abstract:GaN quantum dots have been successful fabricated on sapphire by using metallorganic chemical vapor deposition (MOCVD) by two-step method, including deposition at 500 °C and annealing at 1050 °C. The density and the size of GaN dots are determined by using an atomic force microscope (AFM), and they are controllable by changing the temperature and the duration of the depositing and the annealing. GaN dots are formed only after annealing at high temperature. The phenomenon can be explained like this: the initial layer deposited at 500 °C is a high energy intermediate phase in which the large strain energy can not be relaxed because of the low temperature depositing.
Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

Guangyang Lin,Haiyang Hong,Jie Zhang,Yuying Zhang,Peng Cui,Jianyuan Wang,Songyan Chen,Yong Zhao,Chaoying Ni,Cheng Li,Yuping Zeng

DOI: https://doi.org/10.1016/j.jallcom.2020.157653

IF: 6.2

2021-03-01

Journal of Alloys and Compounds

Abstract:In this work, three-dimensional (3D) Ge condensation of sputtered “Si/SiGe” nanostructures on SiO2/Si substrate was investigated. Through varying the width of sputtered Si/SiGe structures from 50 μm to 400 nm, the Ge content of fabricated SiGe structures can be modulated from 0.49 to 1.0 after 3D Ge condensation. By further constructing a width modified nanowire (NW) with adjacent widths of 800 nm and 400 nm before 3D Ge condensation, a Si0.33Ge0.67/Ge heterostructure NW was fabricated after 3D Ge condensation. Due to inter-diffusion of Si and Ge atoms, a ∼2-μm-long region with gradually varied Ge content from ∼0.67 to 1.0 is formed between Si0.33Ge0.67 and Ge. The low Schottky barrier height (0.29 eV) of Ge NW/metal contact and good conductivity of the Ge NW suggest that the 3D Ge condensation technique is very promising for fabrication of scalable and low-cost SiGe or Ge nano-electronic/photonic devices.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Junkang Li,Ran Cheng,Chang Liu,Pengzhan Zhang,Jiwu Lu,Kunji Chen,Rui Zhang,Yi Zhao

DOI: https://doi.org/10.1016/j.mee.2016.10.002

IF: 2.3

2017-01-01

Microelectronic Engineering

Abstract:In this work, we explored a novel technique for the formation of ultra-shallow p+/n and n+/p junctions on Ge substrate using the spin-on dopant (SOD) followed by laser annealing (LA). The junction depth and doping profiles were extracted and compared between Ge junctions activated by LA and by the conventional rapid thermal annealing (RTA). It is experimentally confirmed that the process of SOD followed by LA method outperformed that by RTA technique in terms of the ultra-shallow junction depth, higher surface doping concentration and steeper doping profiles. Therefore, the high performance Ge p+/n and n+/p junctions fabricated by SOD followed by LA method exhibit suppressed junction leakage current and raised on/off ratios, making this novel technique a promising way for source/drain formation in future technology nodes.
Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

B Yan,Z Yang,Y Shi,JL Liu,R Zhang,YD Zheng,KL Wang

DOI: https://doi.org/10.1109/sim.2005.1511403

2004-01-01

Abstract:In this paper, the interface structural parameters, mainly roughness and the interdiffusion properties have been investigated in two series of Ge/Si quantum dot superlattices (QDSLs), grown by solid-source molecular beam epitaxy (MBE) on Si (100) substrate with S-K mode at 540 degrees C When the nominal thickness of Ge layer increased from 1.2 to 1.8 nm, the Ge layers get rough and the thickness of Ge layers decreases. With the periods of Ge/Si QDSLs increase, the thicknesses of Ge wetting layers (WLs) tend to be thinner and the roughness of Ge dots' height becomes larger. The composition of the quantum dots (QDs) is also estimated by the integrated peak intensity ratio IGe-Ge/ISi-Ge from Raman spectra. The calculated result of Ge/Si interdiffusion from Raman spectra is in accordance with the analyses results of X-ray Reflection (XRR) experiments.
Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Qijiang Shu,Pengru Huang,Fuhua Yang,Linjing Yang,Lei Chen

DOI: https://doi.org/10.1038/s41598-023-34284-8

2023-05-09

Abstract:We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2-4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmission electron microscope, Raman, surface energy theory and dynamics theory, the photoelectric properties of QDs were characterized by photoluminescence (PL) spectra. The results showed that the growth mechanism of QDs conformed to Stranski-Krastanow mode, but the typical thickness of the wetting layer was nearly three times higher than those derived from conventional technologies such as molecular beam epitaxy, chemical vapor deposition, solid phase epitaxy and so on. Meanwhile, the shape evolution of QDs was very different from existing reports. The specific internal causes of these novel phenomena were analyzed and confirmed and reported in this paper. In addition, the AFM, Raman, and PL tests all indicated that the QDs grown when 3.4 nm Ge was deposited have the most excellent morphology, structure, and optoelectronic performance. Our work lays a foundation for further exploration of the controllable growth of QDs at high deposition rates, which is a new way to realize the industrialization of QDs used for future devices.
Interface Interdiffusion Intensified by Formation of Quantum Dots

周星飞,施斌,胡冬枝,樊永良,龚大卫,蒋最敏

DOI: https://doi.org/10.3321/j.issn:0253-4177.2002.07.012

2002-01-01

Abstract:Ge quantum dots (QDs) are fabricated by annealing the smooth strained Ge layers at the temperature of 600°C in an ultrahigh vacuum, which are epitaxially grown at a low temperature of 400°C on Si(100) substrate. Atomic interface interdiffusion during the formation of Ge QDs between Ge epilayer and Si substrate is investigated by Raman spectroscopy. Results indicate that the formation of Ge quantum dots is accompanied by the interface interdiffusion. Usually the quantum dots fabricated on Si substrate are not pure Ge QDs, but Si/Ge alloy QDs.
Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

Hecheng Zou,Liangcai Wu,Xinfan Huang,Feng Qiao,Peigao Han,Xiaohui Zhou,Zhongyuan Ma,Yansong Liu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1016/j.tsf.2005.05.031

IF: 2.1

2005-01-01

Thin Solid Films

Abstract:Using laser-induced crystallization, we successfully fabricated nanocrystalline silicon (nc-Si) /SiO2 multilayers from hydrogenated amorphous silicon (a-Si:H) /SiO2 multilayers, which were prepared by alternate deposition of a-Si:H layer and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition system. The microstructure of the multilayers was characterized by the following techniques: cross-section transmission electron microscopy, low-angle X-ray diffraction, Raman scattering, electron diffraction and atomic force microscopy. The results show that nc-Si crystals with high density have formed within as-deposited a-Si:H layers and that their size can be precisely controlled by adjusting the thickness of a-Si:H layers based on the constrained crystallization principle.
Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

Huang Rui,Wang Dan-Qing,Song Jie,Ding Hong-Lin,Wang Xiang,Guo Yan-Qing,Chen Kun-Ji,Xu Jun,Li Wei,Ma Zhong-Yuan

DOI: https://doi.org/10.7498/aps.59.5823

IF: 0.906

2010-01-01

Acta Physica Sinica

Abstract:SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently thermal annealing and laser irradiation with the aim of fabrication three-dimensional constrained, size-controlled and well-regulated Si nanocrystals. The experimental results show that Si nanocrystals grow in the Si-rich SiN sublayer. Furthermore, the grain size can be controlled according to the thick of Si-rich SiN. It is also found that the crystalline fraction of the multilayers irradiated by laser is significantly higher than that by thermal annealing. The devices that employing the laser-irradiated multilayer as luminescent active layer exhibit an enhanced visible electroluminescence and the external quantum efficiency is improved by 40% in comparison with the device without annealing.
Fabrication and Characterization of Ordered GeSi Nanoislands on Si (001) Substrates

Zhenyang Zhong,Peixuan Chen,Bingying Pan,Yanwu Chen,Zhenhua An,Fang Lu,Zuimin Jiang

DOI: https://doi.org/10.1109/inec.2010.5425100

2010-01-01

Abstract:Ordered GeSi nanoislands were fabricated in combination of self-assembly and nanosphere lithography on Si (001) substrates. Well ordered pits in a hexagonal lattice on Si (001) substrates are readily obtained via nanosphere lithography. The preferential nucleation of GeSi nanoislands in the pits results in laterally ordered nanoislands on such prepatterned Si (001) surface during Ge deposition. Multilayer GeSi nanoislands separated by thin Si spacer layers were also realized. The vertical alignment of nanoislands along the growth direction can give rise to three-dimensionally ordered nanoislands or nanoisland crystal. To explore the optoelectronic properties of ordered nanoislands, A Si p-i-n diode embedded with multilayer ordered GeSi nanoislands were fabricated. Photoluminescence of the samples with multilayer GeSi nanoislands were studied.
Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

T. M. Lu,J. K. Gamble,R. P. Muller,E. Nielsen,D. Bethke,G. A. Ten Eyck,T. Pluym,J. R. Wendt,J. Dominguez,M. P. Lilly,M. S. Carroll,M. C. Wanke

DOI: https://doi.org/10.1063/1.4961889

2016-08-29

Abstract:Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 $\mu$m increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

Mesoscale and Nanoscale Physics
Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

jun wan,y h luo,z m jiang,gyoyoung jin,j l liu,k l wang,x z liao,jin zou

DOI: https://doi.org/10.1063/1.1403667

IF: 2.877

2001-01-01

Journal of Applied Physics

Abstract:The Ge/Si interdiffusion in GeSi dots grown on Si (001) substrate by gas-source molecular beam epitaxy is investigated. Transmission electron microscopy images show that, after annealing, the aspect ratio of the height to base diameter increases. Raman spectra show that the Si-Ge mode redshifts and the intensity of the local Si-Si mode increases with the increase of annealing temperature, which suggests the Ge/Si interdiffusion during annealing. The photoluminescence peaks from the dots and the wetting layers show blueshift due to the atomic intermixing during annealing. The interdiffusion thermal activation energies of GeSi dots and the wetting layers are 2.16 and 2.28 eV, respectively. The interdiffusion coefficient of the dots is about 40 times higher than that of wetting layers and the reasons were discussed. (C) 2001 American Institute of Physics.
Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

ZZ Ye,GB Wu,JY Huang,JF Cui,WF Sun,GJ Liu,BH Zhao

DOI: https://doi.org/10.1109/icsict.2004.1435265

2004-01-01

Abstract:The high quality single-layer and multi-layer L nano-structured Si1-xGex have been successfully grown on Si (100) substrates at low temperature by ultrahigh vacuum chemical vapor deposition system (UHV/CVD.). The UHV/CVD system integrated three chambers into a whole and the growth chamber base pressure of 5.0 x 10(-8) Pa can be available. The nano-structures of SiGe/Si were characterized using high-resolution X-ray diffraction (HRXRD.) and cross-sectional transmission electron microscopy (XTEM). The results show good crystal quality and sharp interfaces, This demonstrates further crystal quality improvements of nano-structured SiGe alloy may be available in the application of microelectronics and optoelectronics.

Fabrication of Ge-dots/Si multilayered structures by combination of low-pressure CVD and Ni-induced lateral crystallization

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Fabrication and Characterization of Ge Nanodot/si Nanowire Composite Structures

Fabrication of Gan Nanodots Via Gan Thermal Decomposition in H-2 Atmosphere

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

The Fabrication of GaN Quantum Dots Using Metalorganic Chemical Vapor Deposition

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Interface Interdiffusion Intensified by Formation of Quantum Dots

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

Fabrication and Characterization of Ordered GeSi Nanoislands on Si (001) Substrates

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition