Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Study in hydrogen ion irradiation of N+-ion-implanted SiC-C films

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Hydrogen Resistance Property of Surface N~+ Implanting SiC Coating

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

XPS studies on silicon carbonitride films prepared by sequential implantation of nitrogen and carbon into silicon

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Ion beam synthesis of C-N crystalline film and its analysis

Ion Irradiation Induced Bubble Relaxation in SiC

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Investigation of Carbon Nitride Films Deposited by Ion Beam-Assisted Deposition with Low Bombarding Energy of N Ions

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Study of Hydrogen Gettering Effects in Plasma Immersion Ion Implantation Doping Experiments

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Nitrogen Ion Implantation into the Amorphous CN Films Prepared with Ion Beam Assisted Deposition

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Study on crystallization of hydrogenated nanocrystalline silicon carbon films

Structure Of Nc-Si : H Films