Abstract:It is relatively easy to obtain highly oriented/textured Ba(ZrxTi1–x)O3 (BZT) films by magnetron sputtering, but it is complicated to control the composition of these sputtered oriented films. Here, a series of BZT ceramic targets with different ingredients (x = 0.05, 0.1, 0.15, 0.2, 0.25, and 0.3) and a BaTiO3 (x = 0) target were fabricated by solid-state sintering. Then, the corresponding BZT thin films were deposited on LaNiO3 (LNO) buffered Pt/Ti/(001)Si substrates adopting radio-frequency magnetron sputtering. Benefit from the prefabricated (001)-LNO buffer layer and optimized BZT film preparation process, all BZT films exhibit highly (00l) preferred orientation. However, the degree of orientation, lattice parameter, dielectric properties, ferroelectric behaviors, and energy-storage characteristics are all highly dependent on the Zr content of BZT films sputtered by targets with the same composition. (00l)-oriented BZT films with relatively low Zr content have a better crystalline structure [narrower full width at half maximum (FWHM), larger grains]. It is also found that the rising of the Zr content in (00l)-oriented BZT films will result in a larger out-of-plane lattice parameter, and these results indicate that the doping amount of Zr will strongly change the heterointerface stress/strain states and the growth mode of the oriented films, and then effectively tailor their electric performances.

Preparation of 〈100〉-Oriented Ba1-xSr xO3 films on Ni substrates by sol-gel method

Effect of Sputtering-Target Composition on the Structure, Dielectric, Ferroelectric, and Energy Storage Properties of Highly (00L)-Oriented Ba(ZrxTi1–x)O3 Films

Preparation and Properties of NiO Films Via Sol-gel Process and Spin-coating

(111)-Oriented Batio3 Thin Films Hydrothermally Formed On Tio2/Si Substrate

Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface

Preparation and Study of Oriented TiO2 Thin Film

Preparation and ferroelectric properties of (124)-oriented SrBi4Ti4O15 ferroelectric thin film on (110)-oriented LaNiO3 electrode

Preparation and Characterization of Highly Oriented NiO(200) Films by a Pulse Ultrasonic Spray Pyrolysis Method

Preparation of (1− <i>x</i> %)(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub>– <i>x</i> %SrTiO<sub>3</sub> thin films by a sol–gel method for dielectric tunable applications

Preparation of Nano-Structured BaTiO3 Thin Film by Electrophoretic Deposition and Its Characterization

The structural and electrical properties of oriented SrTiO3 films prepared by metal organic deposition method

Preparation of (1− x %)(Na 0.5 Bi 0.5 )TiO 3 – x %SrTiO 3 thin films by a sol–gel method for dielectric tunable applications

Hydrothermal preparation of BaTiO3 thin film on silicon

Low-temperature deposition of (110)-oriented barium titanate thin films and their electrical properties

Sol–gel-processed (001)-textured BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates with PbO seeding nanocrystals

Preferred Orientation Growth of Ba0.6Sr0.4TiO3 Thin Films with Epitaxial MgO Buffer Layer on Si(100) Substrate

Preparation of Epitaxial Metallic LaNiO3 Films on SrTiO3 by Metalorganic Decomposition for the Oriented Growth of PbTiO3

Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates

Orientation Preferred Structures in BaTiO3 Thin Films on Ni Substrates

The oriented growth of PbTiO3 thin films deposited by a sol-gel process on substrates without lattice match

PREPARATION OF CALCIUM DOPED STRONTIUM BISMUTH TITANATE FERROELECTRIC THIN FILMS BY SOL-GEL PROCESSING