Abstract:Semiconductor chips are the cornerstone of the information age, which play a vital role in the rapid development of emerging technologies such as big data, machine learning, and artificial intelligence. Driven by the increasing demand for computing power, the chip manufacturing industry has been committed to pursuing higher level of integration and smaller device volumes. As a critical step in the chip manufacturing processes, the etching process therefore faces great challenges. Dry etching (or plasma etching) process based on the low-temperature plasma science and technology is the preferred solution for etching the high-precision circuit pattern. In the low-temperature plasma, electrons obtain energy from the external electromagnetic field and transfer the energy to other particles through collision process. After a series of complex physical and chemical reactions, a large number of active particles such as electrons, ions, atoms and molecules in excited states, and radicals are finally generated, providing the material conditions for etching the substrate. Dry etching chamber is a nonlinear system with multiple space-time dimensions, multiple reaction levels and high complexity. Facing such a complex system, only by fully understanding the basic physical and chemical reaction of the etching process can we optimize the process parameters and improve the etching conditions, so as to achieve precision machining of the semiconductor and meet the growing demand of the chip industry for etching rate and yield. In the early days, the process conditions of dry etching were determined through the trial-and-error method, which is characterized by high cost and low yield. However, with the help of plasma simulation, nowadays people have been able to narrow the scope of experiment to a large extent, and find out efficiently the optimal process conditions in a large number of parameters. In this review, we first introduce the basic theory of the mostly used models for plasma simulation including kinetic, fluid dynamic, hybrid and global models, in which the electron collision cross sections are the key input parameters. Since the formation of the low-temperature plasma is driven by the electron-heavy particle collision processes, and the active species for plasma etching are generated in the reactions induced by electron impact, the accuracy and completeness of the cross-section data greatly affect the reliability of the simulation results. Then, the theoretical and experimental methods for obtaining the cross-section data of etching gases are summarized. Finally, the research status of the electron collision cross sections of etching atoms and molecules is summarized, and the future research prospect is discussed.

A New Microplasma Reactor for Scanning Plasma Etching

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Silicon Wafer Etching by Transmitted Electron‐Beam‐Enhanced Plasma

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma (icp) Etching Reactor

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

A Micro-Reactor with Micro-Pin-fin Arrays for Hydrogen Production Via Methanol Steam Reforming

Two-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

In Situ Plasma Studies Using a Direct Current Microplasma in a Scanning Electron Microscope

In-situ Plasma Studies using a Direct Current Microplasma in a Scanning Electron Microscope

Synchrotron-Radiation-Excited Etching Of Silicon Wafer Enhanced By Disk-Shaped Cf4 Plasma

Discharge characteristics of silicon-based DC Helium microplasmas: comparison between Through Silicon Via and closed cavity type micro-reactors

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Electron collision cross section data in plasma etching modeling

Simulation and Design of New Microwae Plasma Source with Slotted Straight Waveguides

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

A Miniaturized ECR Plasma Flood Gun for Wafer Charge Neutralization.