Abstract:During deposition, modification, and etching of thin films and nanomaterials in reactive plasmas, many active species can interact with the sample simultaneously. This includes reactive neutrals formed by fragmentation of the feed gas, positive ions, and electrons generated by electron-impact ionization of the feed gas and fragments, excited states (in particular, long-lived metastable species), and photons produced by spontaneous de-excitation of excited atoms and molecules. Notably, some of these species can be transiently present during the different phases of plasma processing, such as etching of thin layer deposition. To monitor plasma-surface interactions during materials processing, a new system combining beams of neutral atoms, positive ions, UV photons, and a magnetron plasma source has been developed. This system is equipped with a unique ensemble of in-plasma surface characterization tools, including (1) a Rutherford Backscattering Spectrometer (RBS), (2) an Elastic Recoil Detector (ERD), and (3) a Raman spectroscopy system. RBS and ERD analyses are carried out using a differentially pumped 1.7 MV ion beam line Tandetron accelerator generating a beam at grazing incidence. The ERD system is equipped with an absorber and is specifically used to detect H initially bonded to the surface; higher resolution of surface H is also available through nuclear reaction analysis. In parallel, an optical port facing the substrate is used to perform Raman spectroscopy analysis of the samples during plasma processing. This system enables fast monitoring of a few Raman peaks over nine points scattered on a 1.6 × 1.6 mm2 surface without interference from the inherent light emitted by the plasma. Coupled to the various plasma and beam sources, the unique set of in-plasma surface characterization tools detailed in this study can provide unique time-resolved information on the modification induced by plasma. By using the ion beam analysis capability, the atomic concentrations of various elements in the near-surface (e.g., stoichiometry and impurity content) can be monitored in real-time during plasma deposition or etching. On the other hand, the evolution of Raman peaks as a function of plasma processing time can contribute to a better understanding of the role of low-energy ions in defect generation in irradiation-sensitive materials, such as monolayer graphene.

In-situ Plasma Studies using a Direct Current Microplasma in a Scanning Electron Microscope

In Situ Plasma Studies Using a Direct Current Microplasma in a Scanning Electron Microscope

Microplasmas for Advanced Materials and Devices

In-plasma analysis of plasma-surface interactions

Plasma Generation by Household Microwave Oven for Surface Modification and Other Emerging Applications

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Glow discharge-optical emission spectroscopy for in situ analysis of surfaces in plasmas

Experimental Study of Atmospheric-Pressure Micro-Plasmas for the Ambient Sampling of Conductive Materials

Design and Experiments of Microplasma Reactor for Scanning Plasma Etching

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Open-air Direct Current Plasma Jet : Scaling Up, Uniformity, and Cellular Control

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Design and fabrication of the microplasma reactor for maskless scanning plasma etching

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Particle beam experiments for the investigation of plasma-surface interactions: application to magnetron sputtering and polymer treatment