Abstract:Due to the special fields of aerospace, explosion impact, weapon penetration, and other high-g value acceleration test, the sensor test range and antioverload capability have great requirements. At present, most accelerometer beams with equal Section are used. The existing data prove that the beam structure with variable Section can effectively solve the problem of stress concentration, improve the antioverload capability of acceleration sensor, and increase the system stability through theoretical simulation. This study presents a hybrid-integrated high-precision micro-electromechanical systems (MEMS) ultrahigh-g piezoresistive accelerometer, which is composed of a sensitive structure and an application-specific integrated circuit (ASIC) interface. Based on the traditional constant-section four-beam accelerometer, a variable-section beam is proposed, and the Section size increases linearly with the length of beam. Through finite-element simulation analysis, it is verified that the variable-section beam has the characteristics of reducing stress concentration and can improve the antioverload ability of the accelerometer. The simulation results show that the maximum stress of the structure under 200000 g is 28.34 MPa, and its resonance frequency is 548 kHz. Finally, the processing flow is designed, and the fabrication of MEMS chip is completed. Based on the Taiwan semiconductor manufacturing company (TSMC) 0.35- $mu ext{m}$ process, the ASIC interface is designed and fabricated to process the signal from the sensing element and realize the functions of amplification and filtering. The MEMS chip and ASIC chip are integrated by gold wire bonding, packaged in a stainless-steel shell, and tested by Hopkinson bar. The test results show that the sensitivity of the accelerometer is $0.2747 mu ext{V}$ /g, the nonlinearity is 2.79%, and the full range is 200000 g, and the antioverload capacity is 250000 g.

Study on the packaging technology for a high-G MEMS accelerometer

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Finite Element Simulation on Packaging of Hinged High-G Micromachined Accelerometer

Investigation and experiment of high shock packaging technology for High-G MEMS accelerometer

Study on Package Thermal Stress of Multi-ranged Micro-accelerometer

Low stress packaging of a micromachined accelerometer

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Determination of Thermally Induced Effects and Design Guidelines of Optomechanical Accelerometers

Study on Encapsulation and SMT Technology for MEMS High-g Acceleration Sensors

Accurate Assessment of Packaging Stress Effects on MEMS Sensors by Measurement and Sensor–Package Interaction Simulations

Design and Test of MEMS Resonant Accelerometer with a Novel Die-Attach Structure

Study and characterization of plastic encapsulated package for a three-axis piezoresistive acceleromete with guard-ring structure

Design, Manufacture And Test Of Novel Mems Piezoresistive Accelerometer For High G Application

Design and Experiment of a Hybrid-Integrated Ultrahigh-g Accelerometer With Variable-Section Beam

Evaluation of Die Stress in MEMS Packaging: Experimental and Theoretical Approaches

A SOI Sandwich Differential Capacitance Accelerometer with Low-Stress Package

Study of Multi-ranged Piezoresistive Micro Accelerometer Package Failure under High Overload

Development of wafer-level-packaging technology for simultaneous sealing of accelerometer and gyroscope under different pressures

A Study on Packaging of PZT MEMS Microphone