Design, Manufacture And Test Of Novel Mems Piezoresistive Accelerometer For High G Application
Jj Shi,Yl Hao,W Zhang,Zj Zeng
2004-01-01
Abstract:In order to test the anti-overload ability and the piezoresistive characteristics of silicon, this paper presents design, manufacture, and test of a novel accelerometer sensor, here we adopt crystal silicon as the base to make accelerometer for high g application other than silicon carbide. During the fabrication process, we adopted the bulk-silicon MEMS process empoldered by Peking University, we also explored a new method to attain acute pieresistance, meanwhile ICP and KOH guarantee the perfect release of the structure. Under the high g impact, the structure of the sensor deforms and shows uneven stress distribution, by the help of Wheatstone bridge that composes four piezoresistances, we can achieve the transform: from the inertial impact to the electricity signals. In conclusion, the results show that it has the sensitivity of 450similar to600 nV/g in the test range of 50000g, high anti-overload ability beyond 150000g, high yield(>90%). At the same time, it has the advantages of lower price and better compatibility with IC compared with SiC.