Study on Encapsulation and SMT Technology for MEMS High-g Acceleration Sensors

GUO Tao,XU Yan,LI Ping
DOI: https://doi.org/10.3969/j.issn.1000-3932.2011.09.029
2011-01-01
Abstract:The finite element model for the encapsulation of high-g acceleration sensors was established,and the SMT(surface mounting technology) thermal stress effect on high-g acceleration sensor performance was simulated with ANSYS.The simulation results show that the thermal expansion coefficient,elastic modulus and thickness of SMT adhesive mainly influence the thermal stress distribution and the output sensitivity of sensors.
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